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S34ML08G301BHI000

Name: SkyHigh Memory S34ML08G301BHI000
Brand: SkyHigh Memory
SKU: 727-08G301BHI000
Price: 9.36 EUR
Availability: OutOfStock

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Mouser No:

727-08G301BHI000

Mfr. No:

S34ML08G301BHI000

Mfr.:

SkyHigh Memory

Description:

NAND Flash SLC,8Gb,1x,3V,x8,1bit,VLD63,

Datasheet:

S34ML08G301BHI000 Datasheet (PDF)

ECAD Model:

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Learn more about SkyHigh Memory S34ML08G301BHI000

Availability

Stock:: 0

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Factory Lead Time:: 22 Weeks Estimated factory production time.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	9,36 €	9,36 €
	8,69 €	86,90 €
	8,43 €	210,75 €
	8,23 €	411,50 €
	8,02 €	769,92 €
	7,77 €	2.237,76 €
	7,57 €	4.360,32 €
	7,37 €	7.782,72 €
2.592	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	SkyHigh Memory
Product Category:	NAND Flash
Mounting Style:	SMD/SMT
Package/Case:	BGA-63
Series:	S34ML08G3
Memory Size:	8 Gbit
Interface Type:	Parallel
Organisation:	1 G x 8
Timing Type:	Asynchronous
Data Bus Width:	8 bit
Supply Voltage - Min:	2.7 V
Supply Voltage - Max:	3.6 V
Supply Current - Max:	35 mA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Packaging:	Tray
Active Read Current - Max:	35 mA
Brand:	SkyHigh Memory
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TH
Moisture Sensitive:	Yes
Product Type:	NAND Flash
Factory Pack Quantity:	96
Subcategory:	Memory & Data Storage

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Datasheet

S34ML08G301BHI000 Datasheet (PDF)

PCN

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USHTS:: 8542320051
ECCN:: 3A991.b.1.a

S34ML0xGx SLC NAND Flash Memory

SkyHigh Memory S34ML0xGx SLC NAND Flash Memory is the first family of Single-Level Cell (SLC) NAND products using 4x nm floating-gate technology, targeted specifically for data storage in automotive, consumer, and networking applications. The SLC NAND is offered in densities from 1Gb to 8Gb, in 3.0V and 1.8V families that feature high performance, extended temperature range, long-term product support, and stringent reliability demands, such as 1-bit, 4-bit Error Correction Code (ECC). The NAND cell provides the most cost-effective solution for the solid-state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.