S80KS2564GACHI040

Infineon Technologies
727-S80KS2564GACHI04
S80KS2564GACHI040

Mfr.:

Description:
DRAM SPCM

ECAD Model:
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In Stock: 520

Stock:
520 Can Dispatch Immediately
Factory Lead Time:
15 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
5,83 € 5,83 €
5,54 € 55,40 €
5,42 € 135,50 €
5,33 € 266,50 €
5,25 € 525,00 €
4,88 € 1.268,80 €
4,87 € 2.532,40 €
2.600 Quote

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: DRAM
RoHS:  
HyperRAM
256 Mbit
16 bit
200 MHz
FBGA-49
35 ns
1.7 V
2 V
- 40 C
+ 85 C
Tray
Brand: Infineon Technologies
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 260
Subcategory: Memory & Data Storage
Supply Current - Max: 20 mA
Part # Aliases: SP005647395
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Attributes selected: 0

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CNHTS:
8542329010
USHTS:
8542320024
ECCN:
3A991.b.2.a

S80KS2562 & S80KS2563 256Mb HYPERRAM™ 2.0 Memory

Infineon Technologies S80KS2562 and S80KS2563 HYPERRAM™ 2.0 Memory are high-speed, low-pin-count, low-power self-refresh Dynamic RAM (DRAM) with a HyperBUS (S80KS2562) or Octal xSPI (S80KS2563) interface. Both devices feature a 200MHz maximum clock rate, a data throughput of up to 400MBps, and energy-saving Hybrid Sleep and Deep Power-Down modes. The S80KS2562 and S80KS2563 HYPERRAM are ideal for use in high-performance embedded systems requiring expansion memory for scratchpad or buffering purposes.