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IMT65R010M2HXUMA1

Name: Infineon IMT65R010M2HXUMA1
Brand: Infineon Technologies
SKU: 726-IMT65R010M2HXUMA
Price: 17.12 EUR
Availability: InStock

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Mouser No:

726-IMT65R010M2HXUMA

Mfr. No:

IMT65R010M2HXUMA1

Mfr.:

Infineon Technologies

Description:

SiC MOSFETs SILICON CARBIDE MOSFET

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IMT65R010M2HXUMA1 Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies IMT65R010M2HXUMA1

In Stock: 1.914

Stock:: 1.914 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	17,12 €	17,12 €
	14,60 €	146,00 €
	13,24 €	1.324,00 €
Full Reel (Order in multiples of 2000)
	12,08 €	24.160,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	HSOF-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	168 A
Rds On - Drain-Source Resistance:	13.1 mOhms
Vgs - Gate-Source Voltage:	- 7V, + 23 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	113 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	681 W
Channel Mode:	Enhancement
Tradename:	CoolSiC
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	9.4 ns
Moisture Sensitive:	Yes
Packaging:	Reel
Packaging:	Cut Tape
Product:	SiC MOSFETS
Product Type:	SiC MOSFETS
Rise Time:	24 ns
Series:	650V G2
Factory Pack Quantity:	2000
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Type:	SiC MOSFET
Typical Turn-Off Delay Time:	30 ns
Typical Turn-On Delay Time:	16 ns
Part # Aliases:	IMT65R010M2H SP006051121

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Datasheet

IMT65R010M2HXUMA1 Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

CoolSiC™ 650V G2 MOSFETs

Infineon Technologies CoolSiC™ 650V G2 MOSFETs leverage silicon carbide's performance capabilities by enabling lower energy loss, which translates into higher efficiency during power conversion. Infineon CoolSiC 650V G2 MOSFETs provide benefits for various power semiconductor applications like photovoltaics, energy storage, DC EV charging, motor drives and industrial power supplies. A DC fast charging station for electric vehicles equipped with CoolSiC G2 allows for up to 10% less power loss than previous generations while enabling higher charging capacity without compromising form factors.