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IGLD65R110D2AUMA1

Name: Infineon IGLD65R110D2AUMA1
Brand: Infineon Technologies
SKU: 726-IGLD65R110D2AUMA
Price: 3.84 EUR
Availability: InStock

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Mouser No:

726-IGLD65R110D2AUMA

Mfr. No:

IGLD65R110D2AUMA1

Mfr.:

Infineon Technologies

Description:

GaN FETs CoolGaN Transistor 650 V G5

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IGLD65R110D2AUMA1 Datasheet (PDF)

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Learn more about Infineon Technologies IGLD65R110D2AUMA1

In Stock: 2.696

Stock:: 2.696 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	3,84 €	3,84 €
	2,56 €	25,60 €
	1,97 €	197,00 €
	1,75 €	875,00 €
	1,66 €	1.660,00 €
Full Reel (Order in multiples of 3000)
	1,42 €	4.260,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	PG-LSON-8
Transistor Polarity:	HEMT
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	20 A
Rds On - Drain-Source Resistance:	140 mOhms
Vgs - Gate-Source Voltage:	- 10 V
Vgs th - Gate-Source Threshold Voltage:	1.2 V
Qg - Gate Charge:	2.4 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	51 W
Channel Mode:	Enhancement
Tradename:	CoolGaN
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	20 ns
Moisture Sensitive:	Yes
Packaging:	Reel
Packaging:	Cut Tape
Product:	GaN Transistors
Product Type:	GaN FETs
Rise Time:	7 ns
Series:	650 V G5
Factory Pack Quantity:	3000
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	10 ns
Typical Turn-On Delay Time:	8 ns
Part # Aliases:	IGLD65R110D2 SP005918714

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Datasheet

IGLD65R110D2AUMA1 Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

CoolGaN™ 650V G5 Transistors

Infineon Technologies CoolGaN™ 650V G5 Transistors feature highly efficient gallium nitride (GaN) transistor technology for power conversion. The 650V G5 family addresses consumer, data center, industrial, and solar application challenges. The transistors offer improved system efficiency and power density with ultra-fast switching capability. The CoolGaN technology provides discrete and integrated solutions designed to enhance overall system performance. The Infineon Technologies CoolGaN 650V G5 Transistors enable high operating frequencies and reduce EMI ratings. The transistors are ideal for power distribution, switch-mode power supplies (SMPS), telecommunications, and other industrial applications.