EPC2361

Name: EPC EPC2361
Brand: EPC
SKU: 65-EPC2361
Price: 8.24 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

65-EPC2361

Mfr. No:

EPC2361

Mfr.:

EPC

Description:

GaN FETs EPC eGaN FET,80 V, 1.0 milliohm at 5 V, 3 mm x 5 mm QFN

Lifecycle:

New At Mouser

Datasheet:

EPC2361 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about EPC EPC2361

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	EPC
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	QFN-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	133 A
Rds On - Drain-Source Resistance:	1 mOhms
Vgs - Gate-Source Voltage:	- 4 V, 6 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	28 nC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Channel Mode:	Enhancement
Tradename:	eGaN FET
Technology:	GaN
Brand:	EPC
Configuration:	Single
Moisture Sensitive:	Yes
Packaging:	Reel
Packaging:	Cut Tape
Product:	Power Transistor
Product Type:	GaN FETs
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Unit Weight:	35,200 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

EPC2361 Datasheet (PDF)

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Malaysia
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

FEATURED PRODUCTS

EPC

EPC2305 Enhancement-Mode GaN Power Transistor

Offers a low-inductance 3mm x 5mm QFN package with an exposed top for excellent thermal management.

Learn More

EPC2304 Enhancement-Mode GaN Power Transistor

Handles tasks where ultra-high switching frequency and low on-time are advantageous.

Learn More

EPC2302 Enhancement-Mode GaN Power Transistor

Engineered for high-frequency DC-DC applications and 48V BLDC motor drives.

Learn More

View All Newest Products from EPC

In Stock: 11.801

Stock:: 11.801

Can Dispatch Immediately

An unexpected error occurred. Please try again later.
On Order:: 18.000

Expected 2/18/2027
Factory Lead Time:: 18

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	8,24 €	8,24 €
	4,54 €	45,40 €
	4,18 €	418,00 €
	3,92 €	1.960,00 €
	3,59 €	3.590,00 €
Full Reel (Order in multiples of 3000)
	3,35 €	10.050,00 €

EPC2361

Mfr.: EPC

Description: GaN FETs EPC eGaN FET,80 V, 1.0 milliohm at 5 V, 3 mm x 5 mm QFN

Specifications

Documents (1)

Datasheet

Product & Trade Compliance

Customers Also Purchased

FEATURED PRODUCTS EPC

In Stock: 11.801

Pricing (EUR)

QuickView

An unexpected error has occurred.

Mfr.:

EPC

Description:

GaN FETs EPC eGaN FET,80 V, 1.0 milliohm at 5 V, 3 mm x 5 mm QFN

FEATURED PRODUCTS

EPC