PSRAM (Pseudo SRAM) Semiconductors

Types of Semiconductors
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS
AP Memory DRAM IoT RAM 16Mb QSPI (x1,x4) SDR 144MHz, 1.8V, USON8
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 10.000
Mult.: 10.000
: 10.000

AP Memory DRAM IoT RAM 16Mb QSPI (x4) SDR 144/84MHz, QCC51xx SoC, 1.8V, Ind. Temp, WLCSP Non-Stocked Lead-Time 20 Weeks
Min.: 5.000
Mult.: 5.000
: 5.000


AP Memory DRAM IoT RAM 16Mb QSPI (x4) SDR 144/84MHz, QCC51xx SoC, 1.8V, Ind. Temp., SOP8
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 3.000
Mult.: 3.000
: 3.000

AP Memory DRAM IoT RAM 16Mb QSPI (x1,x4) SDR 144/84MHz, RBX, 1.8V, Ind. Temp, WLCSP
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 5.000
Mult.: 5.000
: 5.000

AP Memory DRAM IoT RAM 256Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24 (OctaRAM for Renesas RZ/A SoC)
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 4.800
Mult.: 4.800

AP Memory DRAM IoT RAM 256Mb OPI (x8,x16) DDR 200MHz, 1.8V, Ind. Temp., WLCSP Suggested Alt APS256XXN-OB9-WA same density NRND Non-Stocked Lead-Time 20 Weeks
Min.: 5.000
Mult.: 5.000
: 5.000

AP Memory DRAM IoT RAM 64Mb QSPI (x1,x4) SDR 144MHz, HS, 1.8V, Ind. Temp, WLCSP
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 5.000
Mult.: 5.000
: 5.000

AP Memory DRAM IoT RAM 64Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., WLCSP Non-Stocked Lead-Time 20 Weeks
Min.: 5.000
Mult.: 5.000
: 5.000

AP Memory DRAM IoT RAM 64Mb OPI (x8) DDR 200MHz, 1.8V, Ext. Temp., BGA24
Datasheet
Lead-Time 20 Weeks
Min.: 1
Mult.: 1

AP Memory APS12808O-OBR-WB
AP Memory DRAM IoT RAM 128Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., WLCSP Non-Stocked Lead-Time 15 Weeks
Min.: 5.000
Mult.: 5.000
: 5.000

AP Memory APS256XXN-OB9-WA
AP Memory DRAM IoT RAM 256Mb OPI (x8,x16) DDR 250MHz, 1.8V, Ind. Temp., WLCSP Non-Stocked Lead-Time 20 Weeks
Min.: 5.000
Mult.: 5.000
: 5.000

AP Memory APS256XXN-OBX9-BG
AP Memory DRAM IoT RAM 256Mb OPI (x8,x16) DDR 250MHz, 1.8V, Ext.. Temp., BGA24
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 4.800
Mult.: 4.800

ISSI DRAM 32Mb, SerialRAM, Continuous Operation, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS
Datasheet
Non-Stocked Lead-Time 12 Weeks
Min.: 3.000
Mult.: 3.000
: 3.000

ISSI DRAM 32Mb, SerialRAM, Continuous Operation, 2.7V-3.6V, 104MHz, 8 pin SOIC 150 mil, RoHS
Datasheet
Non-Stocked Lead-Time 12 Weeks
Min.: 3.000
Mult.: 3.000
: 3.000

ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5,4M x 16,70ns,1.7v-1.95v,54 Ball BGA (6x8 mm), RoHS
Datasheet
Non-Stocked Lead-Time 24 Weeks
Min.: 2.500
Mult.: 2.500
: 2.500

ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5,4M x 16,70ns,1.7v-1.95v,54 Ball BGA (6x8 mm), RoHS
Datasheet
Non-Stocked Lead-Time 24 Weeks
Min.: 2.500
Mult.: 2.500
: 2.500


ISSI DRAM 64Mb, OctalRAM, 8Mbx8, 1.8V, 200MHz, 24-ball TFBGA, RoHS
Datasheet
Non-Stocked Lead-Time 18 Weeks
Min.: 2.500
Mult.: 2.500
: 2.500


ISSI DRAM 64Mb, OctalRAM, 8Mbx8, 3.0V, 166MHz, 24-ball TFBGA, RoHS
Datasheet
Non-Stocked Lead-Time 18 Weeks
Min.: 2.500
Mult.: 2.500
: 2.500

ISSI DRAM 64Mb, SerialRAM, Continuous Operation, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS
Datasheet
Non-Stocked Lead-Time 32 Weeks
Min.: 3.000
Mult.: 3.000
: 3.000

ISSI DRAM 64Mb, SerialRAM, Continuous Operation, 2.7V-3.6V, 104MHz, 8 pin SOIC 150 mil, RoHS
Datasheet
Non-Stocked Lead-Time 32 Weeks
Min.: 3.000
Mult.: 3.000
: 3.000

ISSI DRAM 32Mb, SerialRAM, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS
Datasheet
Non-Stocked Lead-Time 32 Weeks
Min.: 3.000
Mult.: 3.000
: 3.000

ISSI DRAM 32Mb, SerialRAM, 2.7V-3.6V, 104MHz, 8 pin SOIC 150 mil, RoHS
Datasheet
Non-Stocked Lead-Time 32 Weeks
Min.: 3.000
Mult.: 3.000
: 3.000

Alliance Memory DRAM 64M 4Mx16 1.8V LP Pseudo SRAM IT
Datasheet
Non-Stocked
Min.: 490
Mult.: 490

Alliance Memory DRAM 64M 4Mx16 1.8V LP Pseudo SRAM IT
Datasheet
Non-Stocked
Min.: 2.000
Mult.: 2.000
: 2.000

Alliance Memory DRAM 128M 8Mx16 1.8V LP Pseudo SRAM IT
Datasheet
Non-Stocked
Min.: 1
Mult.: 1