TGF297x GaN RF Transistors

Qorvo TGF297x GaN RF Transistors have a frequency range of DC to 12GHz and offer output power from 6W up to 22W. The TGF2970 transistors are constructed using a TQGaN25 process, which features field plate techniques to optimize power and efficiency at a high drain bias operation. Qorvo TGF297x GaN RF Transistors are ideal for military radar and commercial radar including avionics, marine, and weather.

Results: 3
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Maximum Operating Temperature Pd - Power Dissipation
Qorvo GaN FETs 8-12GHz 5W GaN PAE 50% Gain 13dB 305In Stock
700On Order
Min.: 1
Mult.: 1

SMD/SMT QFN-16 N-Channel 1 Channel 32 V 326 mA + 225 C 8.4 W
Qorvo GaN FETs 8-12GHz 20W GaN PAE 50% Gain 11dB
Non-Stocked Lead-Time 20 Weeks
Min.: 1
Mult.: 1

SMD/SMT QFN-20 N-Channel 1 Channel 32 V 1.3 A + 225 C 33 W
Qorvo GaN FETs 8-12GHz 25W GaN PAE 50% Gain 11dB
Non-Stocked Lead-Time 20 Weeks
Min.: 1
Mult.: 1

SMD/SMT QFN-20 N-Channel 1 Channel 32 V 1.8 A + 225 C 49 W