QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Results: 34
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation
Qorvo GaN FETs DC-3.5GHz GaN 2X 120W 36Volt

NI-650 N-Channel
Qorvo GaN FETs 8-12GHz 25W GaN PAE 50% Gain 11dB

SMD/SMT QFN-20 N-Channel 1 Channel 32 V 1.8 A + 225 C 49 W
Qorvo GaN FETs DC-12GHz 27W 32V GaN P3dB @ 3GHz 44.5dBm

SMD/SMT Die N-Channel 32 V 1.7 A - 65 C + 150 C 34.5 W
Qorvo GaN FETs DC-18GHZ 50W TQGaN25 PAE 69.5% Gain 19dB

Die N-Channel
Qorvo GaN FETs DC-18GHZ 25W TQGaN25 PAE 78.3% Gain 18dB

Die N-Channel
Qorvo GaN FETs DC-18GHZ 90W TQGaN25 PAE 70.5% Gain 19dB

Die N-Channel
Qorvo GaN FETs DC-3.5GHz 32V GaN PAE 58% at 3.3GHz

Screw Mount NI-360 N-Channel 32 V 7.32 A - 40 C + 85 C 86 W
Qorvo GaN FETs 8-12GHz 20W GaN PAE 50% Gain 11dB

SMD/SMT QFN-20 N-Channel 1 Channel 32 V 1.3 A + 225 C 33 W
Qorvo T1G4020036-FL
Qorvo GaN FETs DC-3.5GHz GaN 2X 120W 36Volt

NI-650 N-Channel