NTTFS007P02P8

onsemi
863-NTTFS007P02P8
NTTFS007P02P8

Mfr.:

Description:
MOSFETs Power MOSFET, Single, P-Channel, -20V, 6.5mohm, -56A, PQFN8 3x3 P-Channel, -20V, 6.5m ohms, PQFN8 3x3

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about onsemi NTTFS007P02P8

In Stock: 2.100

Stock:
2.100 Can Dispatch Immediately
Factory Lead Time:
24 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
1,01 € 1,01 €
0,657 € 6,57 €
0,544 € 54,40 €
0,522 € 261,00 €
0,504 € 504,00 €
Full Reel (Order in multiples of 3000)
0,458 € 1.374,00 €
0,447 € 2.682,00 €

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
PQFN-8
P-Channel
1 Channel
20 V
56 A
6.5 mOhms
8 V
1 V
44 nC
- 55 C
+ 150 C
30 W
Enhancement
Reel
Cut Tape
Brand: onsemi
Configuration: Single
Fall Time: 68 ns
Forward Transconductance - Min: 80 S
Product Type: MOSFETs
Rise Time: 33 ns
Series: NTTFS007P02P8
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 119 ns
Typical Turn-On Delay Time: 19 ns
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Attributes selected: 0

Datasheet

TARIC:
8541290000
ECCN:
EAR99

NTTFS007P02P8 P-Channel Low/Medium Voltage MOSFET

onsemi NTTFS007P02P8 P-Channel Low/Medium Voltage MOSFET is built using high-performance PowerTrench technology for extremely low RDS(on) switching performance and ruggedness. This P-channel MOSFET offers high power and current-handling capabilities in a widely used surface-mount package. The NTTFS007P02P8 MOSFET features -20V drain to source voltage, ±8V gate to source voltage, 3.8°C/W thermal resistance, junction to case, and 4.5Ω gate resistance. This P-channel  MOSFET is Pb-free, Halide-free, and RoHS compliant. Typical applications include load switch, battery management, power management, and reverse polarity protection.

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