RV4E031RPHZGTCR1

ROHM Semiconductor
755-RV4E031RPHZGTCR1
RV4E031RPHZGTCR1

Mfr.:

Description:
MOSFETs AECQ

Datasheet:
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Learn more about ROHM Semiconductor RV4E031RPHZGTCR1

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
DFN-1616-6W
P-Channel
1 Channel
30 V
3.1 A
105 mOhms
20 V
2.5 V
4.8 nC
- 55 C
+ 150 C
1.5 W
Enhancement
AEC-Q101
Reel
Cut Tape
Brand: ROHM Semiconductor
Configuration: Single
Fall Time: 18 ns
Forward Transconductance - Min: 1.5 S
Product Type: MOSFETs
Rise Time: 22 ns
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 35 ns
Typical Turn-On Delay Time: 7 ns
Part # Aliases: RV4E031RPHZG
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Attributes selected: 0

Datasheet

Specification Sheets

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Compliance Codes
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99
Origin Classifications
Country of Origin:
Japan
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

RV4E031RP HZG Small Signal MOSFET

ROHM Semiconductor RV4E031RP HZG Small Signal MOSFET features low on-resistance, a small high power package, and a low voltage drive. This MOSFET is 100% UIS tested and includes a Wettable Flank for Automated Optical-solder Inspection (AOI). The RV4E031RP HZG signal MOSFET operates at -55°C to 150°C junction temperature range and storage temperature range. This MOSFET offers -30V drain-source voltage, ±3.1A continuous drain current, and 1.5W power dissipation. Typical applications include switching circuits, high side load switch, and high-speed line driver.

Availability

Stock:
Non-Stocked
Factory Lead Time:
17 Weeks Estimated factory production time.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
1,19 € 1,19 €
0,553 € 5,53 €
0,491 € 49,10 €
0,382 € 191,00 €
0,361 € 361,00 €
Full Reel (Order in multiples of 3000)
0,284 € 852,00 €
0,277 € 1.662,00 €
0,262 € 2.358,00 €

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