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PMZB350UPE,315

Name: Nexperia PMZB350UPE,315
Brand: Nexperia
SKU: 771-PMZB350UPE315
Price: 0.39 EUR
Availability: OutOfStock

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See Product Specifications

Mouser No:

771-PMZB350UPE315

Mfr. No:

PMZB350UPE,315

Mfr.:

Nexperia

Description:

MOSFETs PMZB350UPE/SOT883B/XQFN3

Datasheet:

PMZB350UPE,315 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Nexperia PMZB350UPE,315

Availability

Stock:: 0

You can still purchase this product for backorder.

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On Order:: 18.810

Expected 6/7/2027
Factory Lead Time:: 53

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 10000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,396 €	0,40 €
	0,273 €	2,73 €
	0,173 €	17,30 €
	0,109 €	54,50 €
	0,095 €	95,00 €
	0,084 €	210,00 €
	0,071 €	355,00 €
Full Reel (Order in multiples of 10000)
	0,064 €	640,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Nexperia
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-1006-3
Transistor Polarity:	P-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	1.4 A
Rds On - Drain-Source Resistance:	940 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	450 mV
Qg - Gate Charge:	1.3 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	715 mW
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Nexperia
Product Type:	MOSFETs
Factory Pack Quantity:	10000
Subcategory:	Transistors
Part # Aliases:	934066841315
Unit Weight:	0,690 mg

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Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541210000
CAHTS:: 8541290000
USHTS:: 8541210095
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: Malaysia
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

PMZB350UPE 20V P-Channel Trench MOSFET

Nexperia PMZB350UPE 20V P-Channel Trench MOSFET is an enhancement mode field-effect transistor (FET) in a leadless, ultra-small DFN1006B-3 (SOT883B) surface-mounted device (SMD) plastic package. The device employs Trench MOSFET technology, has a low threshold voltage, provides very fast switching, and offers 1.8kV ESD protection. The Nexperia PMZB350UPE MOSFET is ideal for relay drivers, high-speed line drivers, high-side load switches, and switching circuits.