QPD0005 GaN RF Transistors

Qorvo QPD0005 GaN RF Transistors are single-path discrete GaN on SiC High-Electron-Mobility Transistors (HEMTs) in a plastic overmold DFN package. These RF transistors operate over a 2.5GHz to 5GHz frequency range. Qorvo QPD0005 GaN RF Transistors are single-stage, unmatched transistors capable of delivering PSAT of 8.7W at 48V operation. These transistors come in a 4.5mm x 4.0mm package and are RoHS compliant. Applications include WCDMA / LTE, macrocell base station, microcell base station, small cell, active antenna, 5G massive MIMO, and general-purpose applications.

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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Vds - Drain-Source Breakdown Voltage
Qorvo GaN FETs 3.3-3.8GHz 5W 50V GaN Transistor Lead-Time 9 Weeks
Min.: 1
Mult.: 1
Reel: 100

48 V
Qorvo GaN FETs 3.3-3.8GHz 5W 50V GaN Transistor Non-Stocked Lead-Time 16 Weeks
Min.: 2.500
Mult.: 2.500
Reel: 2.500

48 V