NDSH20120CDN

onsemi
863-NDSH20120CDN
NDSH20120CDN

Mfr.:

Description:
SiC Schottky Diodes SIC DIODE GEN2.0 1200V TO247-3L

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about onsemi NDSH20120CDN

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: SiC Schottky Diodes
RoHS:  
REACH - SVHC:
Through Hole
TO-247-3
Dual Anode Common Cathode
24 A
1.2 kV
1.75 V
59 A
1 uA
- 55 C
+ 175 C
1.2 kV
NDSH20120CDN
Tube
Brand: onsemi
Pd - Power Dissipation: 94 W
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 30
Subcategory: Diodes & Rectifiers
Tradename: EliteSiC
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

Datasheet

Compliance Codes
TARIC:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
China
Country of Diffusion:
Korea, Republic of
The country is subject to change at the time of shipment.

D3 EliteSiC Diodes

onsemi D3 EliteSiC Diodes are a solution for applications requiring high-power PFC and output rectification. The onsemi D3 has a maximum voltage rating of 1200V. These diodes come in two package options, TO-247-2LD and TO-247-3LD, providing flexibility for various designs. The D3 EliteSiC Diodes are optimized for high-temperature operation with low series-resistance temperature dependency, ensuring consistent and reliable performance even under extreme conditions.

NDSH20120CDN Silicon Carbide (SiC) Schottky Diode

onsemi NDSH20120CDN Silicon Carbide (SiC) Schottky Diode provides superior switching performance and higher reliability compared to Silicon. The TO-247-3LD packaged NDSH20120CDN features no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. This EliteSiC diode offers a positive temperature coefficient and ease of paralleling.

In Stock: 400

Stock:
400 Can Dispatch Immediately
Factory Lead Time:
21 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
8,30 € 8,30 €
5,71 € 57,10 €
5,70 € 684,00 €
4,94 € 2.519,40 €
4,61 € 4.702,20 €
10.020 Quote

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.