RN Automotive Bias Resistor Built-in Transistors

Toshiba RN Automotive Bias Resistor Built-in Transistors (BRT) are AEC-Q101 qualified and optimized for switching, inverter circuit, interfacing, and driver circuit applications. The bias resistor is integrated, reducing the number of external parts required and decreasing system size and assembly time. The Toshiba RN Automotive Bias Resistor BRTs provide a wide resistance range to adjust to various circuit designs.

All Results (163)

Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS
Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:120-240 SOT-323 (USM) 487In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-416 (SSM) 2.873In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:120-240 SOT-416 (SSM) 5.850In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba Bipolar Transistors - BJT AUTO AEC-Q NPN Tr VCEO:50V Ic:0.15A hFE:350-700 SOT-346 (S-Mini) 7.443In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba Bipolar Transistors - BJT AUTO AEC-Q NPN Tr VCEO:50V Ic:0.15A hFE:200-400 SOT-346 (S-Mini) 7.584In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba Bipolar Transistors - BJT AUTO AEC-Q NPN Tr VCEO:50V Ic:0.15A hFE:120-240 SOT-346 (S-Mini) 6.190In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba Bipolar Transistors - BJT AUTO AEC-Q NPN Tr VCEO:50V Ic:0.15A hFE:200-4000 SOT-323 (USM) 2.764In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba Bipolar Transistors - BJT AUTO AEC-Q NPN Tr VCEO:50V Ic:0.15A hFE:120-240 SOT-323 (USM) 5.892In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba Bipolar Transistors - BJT AUTO AEC-Q NPN Tr VCEO:50V Ic:0.15A hFE:120-700 SOT-416 (SSM) 6.676In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba ESD Protection Diodes / TVS Diodes AUTO AEC-Q Bidirectional ESD Prot. Diode CT:9pF VBR:26V @1mA VESD:+/-25V IPP:3A IR:0.1uA SOD-323 8.335In Stock
6.000Expected 8/18/2026
Min.: 1
Mult.: 1
: 3.000

Toshiba ESD Protection Diodes / TVS Diodes AUTO AEC-Q Bidirectional ESD Prot. Diode CT:6.5pF VBR:32V @1mA VESD:+/-20V IPP:2.5A IR:0.1uA SOD-323 6.017In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba ESD Protection Diodes / TVS Diodes AUTO AEC-Q Bidirectional ESD Prot. Diode CT:9pF VBR:16.2V @1mA VESD:+/-30V IPP:2.5A IR:0.1uA SOT-323 14.788In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba ESD Protection Diodes / TVS Diodes AUTO AEC-Q Bidirectional ESD Prot. Diode CT:9pF VBR:26V @1mA VESD:+/-25V IPP:3A IR:0.1uA SOT-323 3.510In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba ESD Protection Diodes / TVS Diodes AUTO AEC-Q Bidirectional ESD Prot. Diode CT:6.5pF VBR:32V @1mA VESD:+/-20V IPP:2.5A IR:0.1uA SOT-323 8.750In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP + PNP Tr VCEO:-50V Ic:-0.15A hFE:120-400 SOT-363 (US6) 5.638In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP + NPN Tr VCEO:-50V Ic:-0.15A hFE:120-400 SOT-363 (US6) 6.420In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP + NPN Tr VCEO:-50V Ic:-0.15A hFE:120-400 SOT-363 (US6) 5.962In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP + NPN Tr VCEO:-50V Ic:-0.15A hFE:120-240 SOT-563 (ES6) 1.154In Stock
Min.: 1
Mult.: 1
: 4.000

Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP + NPN Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-363 (US6) 3.829In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba Bipolar Transistors - BJT AUTO AEC-Q NPN + NPN Tr VCEO:50V Ic:0.15A hFE:120-400 SOT-563 (ES6) 7.757In Stock
Min.: 1
Mult.: 1
: 4.000

Toshiba Bipolar Transistors - BJT AUTO AEC-Q NPN + NPN Tr VCEO:50V Ic:0.15A hFE:200-400 SOT-363 (US6) 5.372In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba Digital Transistors AUTO AEC-Q Single NPN Q1BSR=4.7kO, Q1BER=4.7kO, VCEO=50V, IC=0.1A (SOT-416) 4.630In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba Digital Transistors AUTO AEC-Q Single NPN Q1BSR=10kO, Q1BER=10kO, VCEO=50V, IC=0.1A (SOT-416) 5.805In Stock
Min.: 1
Mult.: 1
: 3.000

Toshiba Digital Transistors AUTO AEC-Q Single NPN Q1BSR=10kO, Q1BER=10kO, VCEO=50V, IC=0.1A (SOT-723) 5.442In Stock
Min.: 1
Mult.: 1
: 8.000

Toshiba Digital Transistors AUTO AEC-Q NPN Q1BSR=22kO, Q1BER=22kO, VCEO=50V, IC=0.1A (SOT-723) 15.409In Stock
Min.: 1
Mult.: 1
: 8.000