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STO33N60M6

Name: STMicroelectronics STO33N60M6
Brand: STMicroelectronics
SKU: 511-STO33N60M6
Price: 5.1 EUR
Availability: OutOfStock

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See Product Specifications

Mouser No:

511-STO33N60M6

Mfr. No:

STO33N60M6

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 600 V, 105 mOhm typ., 25 A MDmesh M6 Power MOSFET

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Datasheet:

STO33N60M6 Datasheet (PDF)

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-LL-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	25 A
Rds On - Drain-Source Resistance:	125 mOhms
Vgs - Gate-Source Voltage:	25 V
Vgs th - Gate-Source Threshold Voltage:	4.75 V
Qg - Gate Charge:	33.4 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	230 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Reel
Packaging:	Cut Tape
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	7.5 ns
Product Type:	MOSFETs
Rise Time:	33 ns
Series:	MDmesh M6
Factory Pack Quantity:	1800
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	38.5 ns
Typical Turn-On Delay Time:	19.5 ns
Unit Weight:	76 mg

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Filter Document:

Datasheet

STO33N60M6 Datasheet (PDF)

PCN

Technical Resources

TO-LL and MDmesh M6 the latest breakthrough in high-level telecom SMPS (PDF)

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Malaysia
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

STO65N60DM6 Power MOSFET

STMicroelectronics STO65N60DM6 Power MOSFET is part of the MDmesh DM6 fast recovery diode series combining very low recovery charge (Q_rr), recovery time (t_rr), and excellent improvement in R_DS(on). The STO65N60DM6 offers excellent switching performance via the extra driving source pin. This performance makes the STM STO65N60DM6 Power MOSFET ideal for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

STO67N60x MDmesh Power MOSFETs

STMicroelectronics STO67N60x MDmesh Power MOSFETs are Zener-protected and 100% avalanche-tested N-channel power MOSFETs suited for switching applications. These power MOSFETs feature excellent switching performance, low gate input resistance, and lower R_DS(on) per area compared to the previous generation. The STO67N60DM6 power MOSFET is a fast-recovery body diode and combines a very low recovery charge (Q_rr) and recovery time (t_rr) with the most effective switching behavior. The STMicroelectronics STO67N60M6 power MOSFET is ideal for LLC converters and boost PFC converters.

MDmesh™ M6 MOSFETs

STMicroelectronics MDmesh™ M6 MOSFETs combine a low gate charge (Q_g) with an optimised capacitance profile to target high efficiency on new topologies in power conversion applications. The super-junction MDmesh M6 series offers extremely high-efficiency performance resulting in increased power density and a low gate charge for high frequencies. The M6 series MOSFETs have a breakdown voltage ranging from 600 to 700V. They are available in a wide range of packaging options, including a TO-Leadless (TO-LL) package solution, allowing efficient thermal management. The devices include a wide range of operating voltages for industrial applications, including chargers, adapters, silver box modules, LED lighting, telecoms, servers, and solar.