Results: 40
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging
IXYS MOSFETs TO3P 1.5KV 3A N-CH HIVOLT
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-3P-3 N-Channel 1.5 kV 1.83 A 7.3 Ohms - 30 V, 30 V 2.5 V - 55 C + 150 C 73 W Tube
IXYS MOSFETs TO268 1.5KV 4A N-CH HIVOLT
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 300
Mult.: 30

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 1.5 kV 4 A 6 Ohms - 30 V, 30 V 2.5 V 375 nC - 55 C + 150 C 280 W Enhancement Tube
IXYS MOSFETs 0.5 Amps 1000V
Datasheet
Non-Stocked
Min.: 1
Mult.: 1
: 75

Si Through Hole TO-251-3 N-Channel 1 Channel 1 kV 750 mA 17 Ohms - 30 V, 30 V - 55 C + 150 C 40 W Reel, Cut Tape

IXYS MOSFETs 24 Amps 1000V
Datasheet
Non-Stocked Lead-Time 28 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 24 A 400 mOhms - 20 V, 20 V 5.5 V 267 nC - 55 C + 150 C 568 W Enhancement Tube
IXYS MOSFETs 2 Amps 1000V 7 Rds
Datasheet
Non-Stocked
Min.: 300
Mult.: 50
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1 kV 2 A 7 Ohms - 20 V, 20 V - 55 C + 150 C 100 W Enhancement Tube

IXYS MOSFETs 13 Amps 800V
Datasheet
Non-Stocked
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 13 A 800 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement Tube

IXYS MOSFETs 14 Amps 800V 0.7 Rds
Datasheet
Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 14 A 700 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement Tube

IXYS MOSFETs 20 Amps 600V 0.35 Rds
Datasheet
Non-Stocked Lead-Time 28 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20 A 350 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement Tube

IXYS MOSFETs 40 Amps 300V 0.085 Rds
Datasheet
Non-Stocked Lead-Time 29 Weeks
Min.: 300
Mult.: 30
Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 40 A 85 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement Tube

IXYS MOSFETs 5 Amps 1000V 2 Rds
Datasheet
Non-Stocked
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 5 A 2 Ohms - 20 V, 20 V - 55 C + 150 C 180 W Enhancement Tube

IXYS MOSFETs 67 Amps 100V 0.025 Rds
Datasheet
Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 67 A 25 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement Tube

IXYS MOSFETs STD N-CHNL PWR MOSFE 100V, 75A
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 75 A 20 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement Tube
IXYS MOSFETs 33 Amps 500V 0.17 Rds
Datasheet
Non-Stocked
Min.: 300
Mult.: 300

Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 33 A 170 mOhms - 20 V, 20 V - 55 C + 150 C 416 W Enhancement Tube
IXYS MOSFETs 1.5 Amps 1000V 11 Rds
Datasheet
Non-Stocked Lead-Time 38 Weeks
Min.: 300
Mult.: 50

Si Through Hole TO-220-3 N-Channel 1 Channel 1 kV 1.5 A 11 Ohms - 30 V, 30 V - 55 C + 150 C 54 W Enhancement Tube
IXYS MOSFETs 75 Amps 100V 0.02 Rds
Datasheet
Non-Stocked
Min.: 30
Mult.: 30
Si SMD/SMT TO-268-3 N-Channel 1 Channel 100 V 75 A 20 mOhms - 20 V, 20 V - 55 C + 150 C 300 W Enhancement Tube