It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

SIA906EDJ-T1-GE3

Name: Vishay SIA906EDJ-T1-GE3
Brand: Vishay Semiconductors
SKU: 781-SIA906EDJ-GE3
Price: 0.81 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

781-SIA906EDJ-GE3

Mfr. No:

SIA906EDJ-T1-GE3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs 20V Vds 12V Vgs PowerPAK SC-70

Datasheet:

SIA906EDJ-T1-GE3 Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Vishay Semiconductors SIA906EDJ-T1-GE3

In Stock: 27.972

Stock:: 27.972 Can Dispatch Immediately

An unexpected error occurred. Please try again later.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,817 €	0,82 €
	0,506 €	5,06 €
	0,329 €	32,90 €
	0,252 €	126,00 €
	0,227 €	227,00 €
Full Reel (Order in multiples of 3000)
	0,195 €	585,00 €
	0,18 €	1.080,00 €
	0,168 €	1.512,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SC-70-6
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	4.5 A
Rds On - Drain-Source Resistance:	46 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	600 mV
Qg - Gate Charge:	950 pC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	7.8 W
Channel Mode:	Enhancement
Tradename:	TrenchFET, PowerPAK
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Dual
Fall Time:	12 ns
Forward Transconductance - Min:	14 S
Product Type:	MOSFETs
Rise Time:	18 ns
Series:	SIA
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	12 ns
Typical Turn-On Delay Time:	10 ns
Part # Aliases:	SIA906EDJ-GE3
Unit Weight:	28 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

SIA906EDJ-T1-GE3 Datasheet

Models

PCN

Technical Resources

REACH Certificate (PDF)

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

SiA906EDJ Dual N-Channel MOSFET

Vishay Siliconix SiA906EDJ Dual N-Channel MOSFET is designed to save space and increase power efficiency in portable electronics. It features the industry's lowest on-resistance for 20V (12V V_GS) devices at 4.5V gate drives in the 2x2mm footprint area.

Integrated MOSFET Solutions

Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density and efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.