MRFE6VP61K25HR5

Name: NXP MRFE6VP61K25HR5
Brand: NXP Semiconductors
SKU: 841-MRFE6VP61K25HR5
Price: 374.56 EUR
Availability: InStock

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Mouser No:

841-MRFE6VP61K25HR5

Mfr. No:

MRFE6VP61K25HR5

Mfr.:

NXP Semiconductors

Description:

RF MOSFET Transistors VHV6 1.25KW ISM NI1230H

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

MRFE6VP61K25HR5 Datasheet (PDF)

ECAD Model:

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In Stock: 138

Stock:: 138 Can Dispatch Immediately

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Factory Lead Time:: 53 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 50)

Cut Tape

MouseReel™ (+5,00 €)

This Product Ships FREE

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	374,56 €	374,56 €
	323,79 €	3.237,90 €
	311,13 €	7.778,25 €
Full Reel (Order in multiples of 50)
	303,47 €	15.173,50 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	NXP
Product Category:	RF MOSFET Transistors
RoHS:
Transistor Polarity:	N-Channel
Technology:	Si
Id - Continuous Drain Current:	30 A
Vds - Drain-Source Breakdown Voltage:	133 V
Operating Frequency:	1.8 MHz to 600 MHz
Gain:	24 dB
Output Power:	1.25 kW
Maximum Operating Temperature:	+ 150 C
Mounting Style:	Screw Mount
Package/Case:	NI-1230H-4
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	NXP Semiconductors
Forward Transconductance - Min:	28 S
Number of Channels:	2 Channel
Pd - Power Dissipation:	1.333 kW
Product Type:	RF MOSFET Transistors
Series:	MRFE6VP61K25H
Factory Pack Quantity:	50
Subcategory:	MOSFETs
Type:	RF Power MOSFET
Vgs - Gate-Source Voltage:	+ 10 V
Vgs th - Gate-Source Threshold Voltage:	2.7 V
Unit Weight:	13,155 g

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Filter Document:

Datasheet

MRFE6VP61K25HR5 Datasheet (PDF)

PCN

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290055
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Malaysia
Assembly Country of Origin:: Malaysia
Country of Diffusion:: United States

The country is subject to change at the time of shipment.

MRFE6VP61K25H RF Power LDMOS Transistor

NXP's MRFE6VP61K25H Wideband RF Power LDMOS Transistor is a high ruggedness device that is designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace, and radio/land mobile applications. The MRFE6VP61K25H features an unmatched input and output design allowing wide frequency range utilization, between 1.8MHz and 600MHz. This device can be used in either a single-ended or in a push-pull configuration, is suitable for linear application with appropriate biasing, and has integrated ESD protection with greater negative gate-source voltage range for improved Class C operation.

MRFE6VP61K25HR5

Mfr.: NXP Semiconductors

Description: RF MOSFET Transistors VHV6 1.25KW ISM NI1230H

In Stock: 138

Pricing (EUR)

Specifications

Documents (2)

Datasheet

PCN

Environmental Documents

Product & Trade Compliance

More Information

MRFE6VP61K25H RF Power LDMOS Transistor

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Mfr.:

NXP Semiconductors

Description:

RF MOSFET Transistors VHV6 1.25KW ISM NI1230H

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