It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

MMFTP6312D

Name: Diotec Semiconductor MMFTP6312D
Brand: Diotec Semiconductor
SKU: 637-MMFTP6312D
Price: 0.38 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

637-MMFTP6312D

Mfr. No:

MMFTP6312D

Mfr.:

Diotec Semiconductor

Description:

MOSFETs MOSFET, SOT-26, -20V, -2.3A, 150C, P

Datasheet:

MMFTP6312D Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Diotec Semiconductor MMFTP6312D

In Stock: 2.766

Stock:: 2.766 Can Dispatch Immediately

An unexpected error occurred. Please try again later.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	0,387 €	0,39 €
	0,276 €	2,76 €
	0,193 €	19,30 €
	0,169 €	84,50 €
	0,157 €	157,00 €
Full Reel (Order in multiples of 3000)
	0,116 €	348,00 €
	0,086 €	774,00 €
	0,084 €	2.016,00 €
	0,065 €	2.925,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diotec Semiconductor
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-26-6
Transistor Polarity:	P-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	2.3 A
Rds On - Drain-Source Resistance:	115 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Qg - Gate Charge:	4.4 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	960 mW
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Diotec Semiconductor
Configuration:	Dual
Fall Time:	8 ns
Product Type:	MOSFETs
Rise Time:	13 ns
Series:	MMFTN/P
Factory Pack Quantity:	3000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	18 ns
Typical Turn-On Delay Time:	8 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

MMFTP6312D Datasheet (PDF)

Models

Full Material Declaration (PDF)

TARIC:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854121000
MXHTS:: 8541210100
ECCN:: EAR99

Advanced Trench Technology Power MOSFETs

Diotec Semiconductors Advanced Trench Technology Power MOSFETs feature low on-state resistance and fast switching time. These MOSFETs components are available in standard commercial/industrial grading. The power MOSFETs are offered as N, P, or dual N+P channel types in single, dual, and H bridge configurations. These MOSFETs offer a 100mA to 280A current range and a 20V to 250V voltage range.

MMFTP6312D Dual P-Channel MOSFET

Diotec Semiconductor MMFTP6312D Dual P-Channel MOSFET offers fast switching times in a SOT-26 (SOT-457) package. The MMFTP6312D MOSFET features a 20V maximum drain-source voltage, 0.70W to 0.96W maximum power dissipation range, and a 2.3A maximum drain current in a -50°C to +150°C junction temperature range. The Diotec Semiconductor MMFTP6312D Dual P-Channel MOSFET is ideal for signal processing, battery management, drivers, and logic-level converters.