MMBT5551W NPN Silicon High-Voltage Transistors

PANJIT MMBT5551W NPN Silicon High-Voltage Transistors offer a collector-emitter voltage (VCE) of 160V and a collector current (IC) rating of 600mA. The PANJIT MMBT5551W is suitable for a wide range of electronic applications. This transistor is environmentally friendly, lead-free, and complies with EU RoHS 2.0 regulations. Additionally, it features a green molding compound that meets the IEC 61249 standard.

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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
Panjit Bipolar Transistors - BJT NPN HIGH VOLTAGE TRANSISTOR,AEC-Q101 qualified
Datasheet
26.735In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 3.000

Si SMD/SMT SOT-323-3 NPN Single 160 V 180 V 6 V 200 mV 200 mW 300 MHz - 55 C + 150 C AEC-Q101 Reel, Cut Tape, MouseReel
Panjit Bipolar Transistors - BJT NPN HIGH VOLTAGE TRANSISTOR
Datasheet
29.441In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 3.000

Si SMD/SMT SOT-323-3 NPN Single 160 V 180 V 6 V 200 mV 200 mW 300 MHz - 55 C + 150 C Reel, Cut Tape, MouseReel