GNP2x 650V Enhancement Mode GaN HEMTs

ROHM Semiconductor GNP2x 650V Enhancement Mode GaN High-Electron-Mobility Transistors (HEMTs) are designed for high-performance power conversion applications. These modules feature a high breakdown voltage and a low gate charge. The GNP2x series offers high efficiency, high power density, and fast switching capabilities. ROHM GaN HEMTs feature an 8.5V transient gate-to-source voltage and operate within the -55°C to +150°C temperature range. Typical applications include high-switching-frequency and high-density converters.

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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
ROHM Semiconductor GaN FETs TOLL8N 650V 27A HEMT
Datasheet
1.913In Stock
Min.: 1
Mult.: 1
: 2.000

SMD/SMT TOLL-8N N-Channel 1 Channel 650 V 27 A 98 mOhms - 10 V to + 6.5 V 1.5 V 5.2 nC - 55 C + 150 C 159 W Enhancement
ROHM Semiconductor GaN FETs GaN FETs 650V, 23A, 70m
Datasheet
1.339In Stock
3.500Expected 11/5/2026
Min.: 1
Mult.: 1
: 3.500
SMD/SMT DFN8080CK-8 N-Channel 1 Channel 650 V 27.2 A 98 mOhms - 10 V, + 6.5 V 2.5 V 4.7 nC - 55 C + 150 C 169 W Enhancement
ROHM Semiconductor GaN FETs GaN FETs 650V, 14.5A, 130m, Pd 91W
Datasheet
1.658In Stock
3.500Expected 11/6/2026
Min.: 1
Mult.: 1
: 3.500
SMD/SMT DFN8080CK-8 N-Channel 1 Channel 650 V 14.5 A 182 mOhms - 10 V, + 6.5 V 2.5 V 2.8 nC - 55 C + 150 C 91 W Enhancement
ROHM Semiconductor GaN FETs DFN 650V 33.8 HEMT
Datasheet
2.500On Order
Min.: 1
Mult.: 1
: 3.500

SMD/SMT DFN-8 N-Channel 1 Channel 650 V 33.8 A 70 mOhms - 10 V, 6.5 V 2.5 V 6.4 nC - 55 C + 150 C 187 W Enhancement