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SCT2H12NWBTL1

Name: ROHM Semiconductor SCT2H12NWBTL1
Brand: ROHM Semiconductor
SKU: 755-SCT2H12NWBTL1
Price: 5.13 EUR
Availability: InStock

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See Product Specifications

Mouser No:

755-SCT2H12NWBTL1

Mfr. No:

SCT2H12NWBTL1

Mfr.:

ROHM Semiconductor

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

ECAD Model:

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More Information

Stock:: 1.010 Can Dispatch Immediately

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Factory Lead Time:: 23 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Qty.	Unit Price	Ext. Price
	5,13 €	5,13 €
	3,43 €	34,30 €
	2,46 €	246,00 €
	2,09 €	1.045,00 €
Full Reel (Order in multiples of 800)
	2,09 €	1.672,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	SiC MOSFETs
Mounting Style:	SMD/SMT
Package/Case:	TO-263CA-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.7 kV
Id - Continuous Drain Current:	3.9 A
Rds On - Drain-Source Resistance:	1.5 Ohms
Vgs - Gate-Source Voltage:	- 6 V to + 22 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	24 nC
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	39 W
Channel Mode:	Enhancement
Brand:	ROHM Semiconductor
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	32 ns
Forward Transconductance - Min:	0.4 S
Packaging:	Reel
Packaging:	Cut Tape
Product:	SiC MOSFETS
Product Type:	SiC MOSFETS
Rise Time:	25 ns
Factory Pack Quantity:	800
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Type:	N-channel SiC power MOSFET
Typical Turn-Off Delay Time:	24 ns
Typical Turn-On Delay Time:	12 ns