SIHx5N80AE Power MOSFETs

Vishay / Siliconix SIHx5N80AE Power MOSFETs feature a low figure-of-merit, low effective capacitance, and reduced switching and conduction losses. The Vishay / Siliconix SIHx5N80AE Power MOSFETs provide an 850V drain-source voltage and are ideal for server and telecom power supplies. Additionally, the SIHx5N80AE MOSFETs utilize an ultra-low gate charge and integrated Zener diode ESD protection.

Results: 3
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Packaging
Vishay / Siliconix MOSFETs N-CHANNEL 100 V 2.884In Stock
Cut Tape
1,59 €
0,758 €
0,676 €
0,533 €
Reel
0,468 €
Min.: 1
Mult.: 1
: 3.000
Si Through Hole N-Channel 1 Channel 800 V 4.4 A 1.35 Ohms 30 V 4 V 11 nC - 55 C + 150 C 62.5 W Enhancement Reel, Cut Tape
Vishay / Siliconix MOSFETs TO220 800V 3A E SERIES 1.596In Stock
1,77 €
0,851 €
0,762 €
0,604 €
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 3 A 1.35 Ohms 30 V 4 V 11 nC - 55 C + 150 C 29 W Enhancement Tube
Vishay / Siliconix MOSFETs DPAK 800V 4.4A E SERIES 3.849In Stock
1,50 €
0,709 €
0,632 €
0,498 €
Min.: 1
Mult.: 1
Si SMD/SMT TO-252-4 N-Channel 1 Channel 800 V 4.4 A 1.35 Ohms 30 V 4 V 11 nC - 55 C + 150 C 62.5 W Enhancement Tube