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NVBG050N170M1

Name: onsemi NVBG050N170M1
Brand: onsemi
SKU: 863-NVBG050N170M1
Price: 18.21 EUR
Availability: OutOfStock

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See Product Specifications

Mouser No:

863-NVBG050N170M1

Mfr. No:

NVBG050N170M1

Mfr.:

onsemi

Description:

SiC MOSFETs SIC 1700V M1 52MO D2PAK-7

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

NVBG050N170M1 Datasheet

ECAD Model:

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More Information

Learn more about onsemi NVBG050N170M1

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 17 Weeks Estimated factory production time.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	18,21 €	18,21 €
	14,90 €	149,00 €
	13,17 €	1.317,00 €
Full Reel (Order in multiples of 800)
	13,15 €	10.520,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.7 kV
Id - Continuous Drain Current:	50 A
Rds On - Drain-Source Resistance:	76 mOhms
Vgs - Gate-Source Voltage:	- 15 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	4.3 V
Qg - Gate Charge:	107 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	385 W
Channel Mode:	Enhancement
Brand:	onsemi
Configuration:	Single
Fall Time:	13 ns
Packaging:	Reel
Packaging:	Cut Tape
Product:	SiC MOSFETS
Product Type:	SiC MOSFETS
Rise Time:	22 ns
Series:	NVBG050N170M1
Factory Pack Quantity:	800
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	44 ns
Typical Turn-On Delay Time:	14 ns

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Datasheet

NVBG050N170M1 Datasheet

EOL

Product Discontinuation Notification 2026-1-5 (PDF)

ECCN:: EAR99

NVBG050N170M1 Silicon Carbide (SiC) MOSFET

onsemi NVBG050N170M1 Silicon Carbide (SiC) MOSFET is a part of the 1700V M1 planar SiC MOSFET family optimized for fast switching applications. This MOSFET features a maximum 76mΩ @ 20V maximum R_DS(ON), 1700V drain-to-source voltage, 50A continuous drain current, and ultra-low gate charge (typical Q_G(tot) = 107nC). The NVBG050N170M1 SiC MOSFET operates at low effective output capacitance (typical C_oss = 97pF) and -15V/+25V gate-to-source voltage. This SiC MOSFET is 100% avalanche tested and is available in a D2PAK-7L package. The NVBG050N170M1 SiC MOSFET is Pb-free 2LI, Halide-free, and RoHS compliant with exemption 7a. Typical applications include a flyback converters, an automotive DC-DC converters for EVs/HEVs, and an automotive On Board Chargers (OBCs).