IRF100B201

Infineon Technologies
942-IRF100B201
IRF100B201

Mfr.:

Description:
MOSFETs MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg

Datasheet:
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Product Attribute Attribute Value Select Attribute
Infineon
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
Through Hole
TO-220-3
N-Channel
1 Channel
100 V
192 A
4.2 mOhms
- 20 V, 20 V
2 V
170 nC
- 55 C
+ 175 C
441 W
Enhancement
StrongIRFET
Tube
Brand: Infineon Technologies
Configuration: Single
Fall Time: 100 ns
Forward Transconductance - Min: 278 S
Product Type: MOSFETs
Rise Time: 97 ns
Factory Pack Quantity: 1000
Subcategory: Transistors
Typical Turn-Off Delay Time: 110 ns
Typical Turn-On Delay Time: 17 ns
Unit Weight: 2 g
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Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99
Origin Classifications
Country of Origin:
Malaysia
Assembly Country of Origin:
China
Country of Diffusion:
Malaysia
The country is subject to change at the time of shipment.

IRF100x201 HEXFET™ Power MOSFETs

Infineon IRF100x201 HEXFET™ Power MOSFETs are 100V, single N-channel MOSFETs with enhanced body diode dV/dt and dl/dt capability. These MOSFETs provide improved gate, avalanche, and dynamic dV/dt ruggedness, fully characterized capacitance, and avalanche Safe Operating Area (SOA). The IRF100x201 MOSFETs come in TO-220 and D2-Pak packages and are RoHS compliant, lead-free, and halogen-free. Applications include brushed and BLDC motor drive applications, battery powered circuits, half-bridge and full-bridge topologies, power supplies, and power switches.

In Stock: 18.392

Stock:
18.392 Can Dispatch Immediately
Factory Lead Time:
52 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
3,01 € 3,01 €
2,05 € 20,50 €
1,55 € 155,00 €
1,33 € 665,00 €
1,25 € 1.250,00 €
1,24 € 2.480,00 €

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