IXSH80N120L2KHV

IXYS
747-IXSH80N120L2KHV
IXSH80N120L2KHV

Mfr.:

Description:
SiC MOSFETs 1200V 30mohm (80A a. 25C) SiC MOSFET in TO247-4L

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 392

Stock:
392 Can Dispatch Immediately
Factory Lead Time:
27 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
10,71 € 10,71 €
8,72 € 87,20 €
7,27 € 872,40 €
6,47 € 3.299,70 €
6,05 € 6.171,00 €

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: SiC MOSFETs
RoHS:  
Through Hole
TO-247-4L
N-Channel
1 Channel
1.2 kV
79 A
39 mOhms
- 5 V, + 20 V
135 nC
- 55 C
+ 175 C
395 W
Enhancement
Brand: IXYS
Configuration: Single
Fall Time: 14 ns
Packaging: Tube
Product: MOSFETs
Product Type: SiC MOSFETS
Rise Time: 24.4 ns
Factory Pack Quantity: 30
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Type: SiC MOSFET
Typical Turn-Off Delay Time: 28.8 ns
Typical Turn-On Delay Time: 12.8 ns
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TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

IXSH80N120L2KHV SiC MOSFET

IXYS IXSH80N120L2KHV SiC MOSFET is an industrial-grade, single-switch SiC MOSFET exhibiting good power cycling characteristics and very fast, low-loss switching behavior. This MOSFET is designed with an ultra-fast intrinsic body diode and offers a maximum virtual junction temperature of 175°C. The IXSH80N120L2KHV MOSFET features high blocking voltage with low on-resistance and high-speed switching with low capacitance. The IXSH80N120L2KHV MOSFET is used in switch mode power supplies, solar inverters, UPS, motor drives, DC/DC converters, EV charging infrastructure, and induction heating applications.