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Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Series
Packaging
onsemi MOSFET Modules 1200V 6MOHM M3S SIC HALFBRIDGE WITH HPS DBC IN F2 MODULES
Datasheet
12In Stock
Min.: 1
Mult.: 1

SiC Press Fit PIM-36 N-Channel 1.2 kV 191 A 8 mOhms - 10 V, + 22 V 2.8 V - 40 C + 175 C 556 W NXH006P120M3F2PTHG Tray


onsemi MOSFET Modules PIM F2 6MOHM 1200V HALFBRIDGE SIC MODULE
Datasheet
10In Stock
Min.: 1
Mult.: 1

SiC Press Fit - 15 V, + 25 V - 40 C + 150 C NXH006P120MNF2 Tray