TP65H015G5WS

Renesas Electronics
227-TP65H015G5WS
TP65H015G5WS

Mfr.:

Description:
GaN FETs GAN FET 650V 95A TO2 47

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Product Attribute Attribute Value Select Attribute
Renesas Electronics
Product Category: GaN FETs
RoHS:  
Through Hole
TO-247-3
N-Channel
1 Channel
650 V
95 A
18 mOhms
- 20 V, + 20 V
4 V
68 nC
- 55 C
+ 150 C
276 W
Enhancement
GaN
Brand: Renesas Electronics
Configuration: Single
Fall Time: 10 ns
Packaging: Tube
Product Type: GaN FETs
Rise Time: 20 ns
Factory Pack Quantity: 450
Subcategory: Transistors
Typical Turn-Off Delay Time: 132 ns
Typical Turn-On Delay Time: 78 ns
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Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
Philippines
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

TP65H015G5WS SuperGaN® FET

Renesas Electronics TP65H015G5WS SuperGaN® FET is a 650V, 15mΩ gallium nitride GaN normally-off FET that implements a Gen V SuperGaN platform. The platform employs advanced epi and patented design technologies. These Renesas TP65H015G5WS features simplify manufacturability while enhancing efficiency over silicon through a lower gate charge, output capacitance, crossover loss, and reverse recovery charge.

In Stock: 203

Stock:
203 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
20,67 € 20,67 €
12,30 € 123,00 €
11,54 € 1.154,00 €
11,47 € 5.161,50 €