SIHS90N65E-GE3

Vishay / Siliconix
78-SIHS90N65E-GE3
SIHS90N65E-GE3

Mfr.:

Description:
MOSFETs SPR247 650V 87A N-CH MOSFET

ECAD Model:
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Product Attribute Attribute Value Select Attribute
Vishay
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
Through Hole
Super-247-3
N-Channel
1 Channel
650 V
87 A
29 mOhms
30 V
4 V
394 nC
- 55 C
+ 150 C
625 W
Enhancement
Tube
Brand: Vishay / Siliconix
Configuration: Single
Fall Time: 267 ns
Forward Transconductance - Min: 32 S
Product Type: MOSFETs
Rise Time: 152 ns
Series: SIHS E
Factory Pack Quantity: 480
Subcategory: Transistors
Transistor Type: E Series Power MOSFET
Typical Turn-Off Delay Time: 323 ns
Typical Turn-On Delay Time: 85 ns
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Attributes selected: 0

Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

SiHS90N65E Power MOSFET

Vishay / Siliconix SiHS90N65E Power MOSFET offers a low figure-of-merit, low input capacitance, and ultra-low gate charge. The SiHS90N65E Power MOSFET has a 700V drain-source voltage and is optimized to reduce switching and conduction losses. The Vishay / Siliconix SiHS90N65E Power MOSFET is suitable for server and telecom power supplies, lighting, and industrial applications.

In Stock: 27

Stock:
27 Can Dispatch Immediately
Factory Lead Time:
28 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
20,43 € 20,43 €
12,69 € 126,90 €