SIHR080N60E-T1-GE3

Vishay / Siliconix
78-SIHR080N60ET1GE3
SIHR080N60E-T1-GE3

Mfr.:

Description:
MOSFETs N-CHANNEL 600V

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In Stock: 2.187

Stock:
2.187 Can Dispatch Immediately
Quantities greater than 2187 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
6,16 € 6,16 €
4,42 € 44,20 €
3,36 € 336,00 €
3,16 € 3.160,00 €
Full Reel (Order in multiples of 2000)
2,99 € 5.980,00 €
2,85 € 11.400,00 €

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
PowerPAK-8
N-Channel
1 Channel
600 V
51 A
74 mOhms
- 30 V, 30 V
5 V
42 nC
- 55 C
+ 150 C
500 W
Enhancement
PowerPAK
Reel
Cut Tape
Brand: Vishay / Siliconix
Configuration: Single
Fall Time: 31 ns
Forward Transconductance - Min: 4.6 S
Product Type: MOSFETs
Rise Time: 96 ns
Series: SIHR E
Factory Pack Quantity: 2000
Subcategory: Transistors
Typical Turn-Off Delay Time: 37 ns
Typical Turn-On Delay Time: 31 ns
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TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

SiHR080N60E N-Channel Power MOSFET

Vishay / Siliconix  SiHR080N60E N-Channel Power MOSFET is a  fourth-generation 600V E series power MOSFET in a PowerPAK® 8 x 8LR package. The MOSFET provides higher efficiency and power density for telecom, industrial and computing applications. The SiHR080N60E features a low typical on-resistance of 0.074Ω at 10V and ultra-low gate charge down to 42nC. This results in reduced conduction and switching losses, thereby saving energy and increasing efficiency in power systems >2kW. The package also provides a Kelvin connection for improved switching efficiency. The Vishay / Siliconix  SiHR080N60E  is designed to withstand overvoltage transients in avalanche mode with guaranteed limits through 100% UIS testing.