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UG3SC120009K4S

Name: onsemi UG3SC120009K4S
Brand: onsemi
SKU: 431-UG3SC120009K4S
Price: 55.4 EUR
Availability: InStock

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Mouser No:

431-UG3SC120009K4S

Mfr. No:

UG3SC120009K4S

Mfr.:

onsemi

Description:

JFETs 1200V/9MOSICFETDGG3TO247-4

Datasheet:

UG3SC120009K4S Datasheet

ECAD Model:

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In Stock: 627

Stock:: 627 Can Dispatch Immediately

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Factory Lead Time:: 31 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 627 will be subject to minimum order requirements.

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Ext. Price:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	55,40 €	55,40 €
	43,49 €	434,90 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	JFETs
RoHS:
Technology:	SiC
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Configuration:	Single
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Vgs - Gate-Source Breakdown Voltage:	- 25 V to 25 V
Drain-Source Current at Vgs=0:	6 uA
Id - Continuous Drain Current:	120 A
Rds On - Drain-Source Resistance:	7.6 mOhms
Pd - Power Dissipation:	789 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	UG3S
Packaging:	Tube
Brand:	onsemi
Product Type:	JFETs
Factory Pack Quantity:	30
Subcategory:	Transistors

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Datasheet

UG3SC120009K4S Datasheet

PCN

Product Change Notification 2025-4-11 (PDF)

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Combo-FETs

onsemi Combo-FETs are revolutionary devices that combine a low R_DS(on) onsemi SiC JFET with a Si MOSFET in a single, compact package. Explicitly designed for low-frequency protection applications, such as solid-state circuit breakers, battery disconnects, and surge protection, these Combo-FETs allow users access to the JFET gate to optimize the design. Integrating the Si MOSFET in these onsemi Combo-FETs ensures a normally off solution, achieving a size reduction of over 25% compared to discrete implementations.

UG3SC 1200V 7.6mΩ Combo-FET

onsemi UG3SC 1200V 7.6mΩ Combo-FET combines a 1200V SiC JFET and a low-voltage Si MOSFET in a single TO-247-4L package. This design enables a normally off switch while utilizing the advantages of a normally on SiC JFET. The UG3SC Combo-FET from onsemi offers ultra-low on-resistance [R_DS(on)] for reduced conduction losses and the robustness needed for high-energy switching in circuit protection applications.