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NTTFS012N10MDTAG

Name: onsemi NTTFS012N10MDTAG
Brand: onsemi
SKU: 863-NTTFS012N10MDTAG
Price: 2.05 EUR
Availability: InStock

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Mouser No:

863-NTTFS012N10MDTAG

Mfr. No:

NTTFS012N10MDTAG

Mfr.:

onsemi

Description:

MOSFETs PTNG 100V LOW Q 12MOHM N-FET U8FL

Datasheet:

NTTFS012N10MDTAG Datasheet

ECAD Model:

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More Information

Learn more about onsemi NTTFS012N10MDTAG

In Stock: 8.922

Stock:: 8.922 Can Dispatch Immediately

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Factory Lead Time:: 48 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,05 €	2,05 €
	1,32 €	13,20 €
	0,894 €	89,40 €
	0,71 €	355,00 €
	0,599 €	599,00 €
Full Reel (Order in multiples of 1500)
	0,599 €	898,50 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Package/Case:	WDFN-8
Tradename:	PowerTrench
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Product Type:	MOSFETs
Series:	NTTFS012N10MD
Factory Pack Quantity:	1500
Subcategory:	Transistors

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Datasheet

NTTFS012N10MDTAG Datasheet

Material Composition Disclosure

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Korea, Republic of
Assembly Country of Origin:: Malaysia
Country of Diffusion:: Korea, Republic of

The country is subject to change at the time of shipment.

PowerTrench Technology

onsemi PowerTrench Technology represents the advancement of PowerTrench technology, especially from T6 to T10, which signifies a breakthrough in power electronics. Developed by onsemi, PowerTrench MOSFETs offer enhanced efficiency and performance across various applications. The shift from T6/T8 to T10 significantly improves on-resistance and switching performance, which is crucial for energy-efficient designs.

NTTFS012N10MD N-Channel MOSFET

onsemi NTTFS012N10MD N-Channel MOSFET is designed using an advanced PowerTrench^® process that incorporates Shielded Gate technology. This process has been optimized to minimize the on-state resistance R_DS(on) to minimize conduction losses and yet maintain superior switching performance. The NTTFS012N10MD MOSFET features low Q_G and capacitance to minimize driver losses, low Q_RR, soft recovery body diode, and low Q_OSS to improve light-load efficiency. Typical applications include primary switches in isolated DC-DC converters, AC-DC adapters, synchronous rectification in DC-DC and AC-DC, BLDC motors, load switches, and solar inverters.