HB/HB2 Series Insulated-Gate Bipolar Transistors

STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.

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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
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STMicroelectronics IGBTs 650V 40A HSpd trench gate field-stop IGB
Datasheet
Non-Stocked Lead-Time 22 Weeks
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-3P
STMicroelectronics STGB20H65DFB2
STMicroelectronics IGBTs Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a D2PAK package
Datasheet
Non-Stocked Lead-Time 15 Weeks
Min.: 1.000
Mult.: 1.000
: 1.000

IGBT Transistors
STMicroelectronics IGBTs 650V 60A HSpd trench gate field-stop IGB
Datasheet
Lead-Time 22 Weeks
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-3P