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IKWH30N65WR5XKSA1

Name: Infineon IKWH30N65WR5XKSA1
Brand: Infineon Technologies
SKU: 726-IKWH30N65WR5XKSA
Price: 3.35 EUR
Availability: InStock

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Mouser No:

726-IKWH30N65WR5XKSA

Mfr. No:

IKWH30N65WR5XKSA1

Mfr.:

Infineon Technologies

Datasheet:

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Stock:: 59 Can Dispatch Immediately

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Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-3-32
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.4 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	75 A
Pd - Power Dissipation:	190 W
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	Infineon Technologies
Continuous Collector Current Ic Max:	30 A
Country of Assembly:	CN
Country of Diffusion:	DE
Country of Origin:	CN
Gate-Emitter Leakage Current:	100 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	240
Subcategory:	IGBTs
Part # Aliases:	IKWH30N65WR5 SP005430891