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FCMT360N65S3

Name: onsemi FCMT360N65S3
Brand: onsemi
SKU: 863-FCMT360N65S3
Price: 4.42 EUR
Availability: InStock

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See Product Specifications

Mouser No:

863-FCMT360N65S3

Mfr. No:

FCMT360N65S3

Mfr.:

onsemi

Description:

MOSFETs Easy Drive 650V 10A 360 mOhm

Datasheet:

FCMT360N65S3 Datasheet

ECAD Model:

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More Information

Learn more about onsemi FCMT360N65S3

In Stock: 2.518

Stock:: 2.518 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	4,42 €	4,42 €
	2,93 €	29,30 €
	2,05 €	205,00 €
	1,81 €	905,00 €
	1,73 €	1.730,00 €
Full Reel (Order in multiples of 3000)
	1,73 €	5.190,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PQFN-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	10 A
Rds On - Drain-Source Resistance:	360 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	18 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	83 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Configuration:	Single
Fall Time:	10 ns
Forward Transconductance - Min:	6 S
Product Type:	MOSFETs
Rise Time:	11 ns
Series:	SuperFET3
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	34 ns
Typical Turn-On Delay Time:	12 ns
Unit Weight:	156,066 mg

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Filter Document:

Datasheet

FCMT360N65S3 Datasheet

PCN

ON Semiconductor MPN Label Format Change (PDF)

Material Composition Disclosure

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Philippines
Country of Diffusion:: Korea, Republic of

The country is subject to change at the time of shipment.

FCMT360N65S3 SUPERFET® III Easy-Drive Power MOSFET

onsemi FCMT360N65S3 SUPERFET® III Easy-Drive Pwer MOSFET is a high-voltage Super-Junction (SJ) MOSFET that utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rates. The Easy-Drive technology helps manage EMI issues and allows for easier design implementation.

SuperFET® III MOSFETs

onsemi SuperFET® III MOSFETs are high voltage Super-Junction (SJ) N-Channel MOSFETs designed to meet the high power density, system efficiency, and exceptional reliability requirements of telecom, server, electric vehicle (EV) charger and solar products. These devices combine best-in-class reliability, low EMI, excellent efficiency, and superior thermal performance to make them an ideal choice for high-performance applications. Complementing their performance characteristics, the broad range of package options offered by onsemi SuperFET III MOSFETs gives product designers high flexibility, particularly with size-constrained designs.