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QPA2213D

Name: Qorvo QPA2213D
Brand: Qorvo
SKU: 772-QPA2213D
Price: 206.91 EUR
Availability: OutOfStock

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Mouser No:

772-QPA2213D

Mfr. No:

QPA2213D

Mfr.:

Qorvo

Description:

RF Amplifier 2-20 GHz, 2 W GaN Amp

Datasheet:

QPA2213D Datasheet (PDF)

ECAD Model:

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 20 Weeks Estimated factory production time.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	206,91 €	2.069,10 €
	185,49 €	5.564,70 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	RF Amplifier
RoHS:
Operating Frequency:	2 GHz to 20 GHz
Operating Supply Voltage:	18 V
Operating Supply Current:	330 mA
Gain:	21.4 dB
NF - Noise Figure:	5.3 dB
Type:	Driver Amplifiers
Mounting Style:	SMD/SMT
Package/Case:	Die
Technology:	GaN SiC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Series:	QPA2213D
Packaging:	Gel Pack
Brand:	Qorvo
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	US
Development Kit:	QPA2213DEVBV01
Input Return Loss:	15 dB
Number of Channels:	1 Channel
Pd - Power Dissipation:	13.7 W
Product Type:	RF Amplifier
Factory Pack Quantity:	10
Subcategory:	Wireless & RF Integrated Circuits
Test Frequency:	20 GHz
Unit Weight:	2,442 g

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5-0810-13

Filter Document:

Datasheet

QPA2213D Datasheet (PDF)

PCN

Product Change Notification 2025-6-9 (PDF)

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TARIC:: 8542330000
CNHTS:: 8542339000
USHTS:: 8542330001
ECCN:: EAR99

QPA2213 & QPA2213D Wideband Driver Amplifiers

Qorvo QPA2213 and QPA2213D are wideband driver amplifiers that support various operating systems. These amplifiers are ideal for both commercial and military wideband or narrowband systems. Qorvo QPA2213 & QPA2213D Wideband Driver Amplifiers have a frequency range of 2GHz to 20GHz. Its thermal properties can support a range of bias voltages and have DC-blocking capacitors on both RF ports, which are matched to 50Ω. QPA2213 is a packaged wideband driver amplifier. QPA2213D is a wideband driver Monolithic Microwave Integrated Circuit (MMIC) and the DIE version in the series. Both amplifiers are fabricated on its 0.15µm Gallium Nitride (GaN) on the SiC process (QGaN15). These amplifiers also provide a 2W saturated output power and 16dB signal gain while achieving more than 23% power-added efficiency.