NVNJWS200N031LTAG

onsemi
863-VNJWS200N031LTAG
NVNJWS200N031LTAG

Mfr.:

Description:
MOSFETs SMALL SIGNAL REFRESH - T1 30V (N-CH)

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about onsemi NVNJWS200N031LTAG

Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
2.572
Expected 6/11/2026
Factory Lead Time:
51
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
0,688 € 0,69 €
0,474 € 4,74 €
0,313 € 31,30 €
0,237 € 118,50 €
0,212 € 212,00 €
Full Reel (Order in multiples of 3000)
0,167 € 501,00 €

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
DFN-3
N-Channel
1 Channel
30 V
2.2 A
200 mOhms
8 V
1.5 V
1.4 nC
- 55 C
+ 175 C
1.8 W
Enhancement
Reel
Cut Tape
Brand: onsemi
Configuration: Single
Fall Time: 2.2 ns
Product Type: MOSFETs
Rise Time: 2.6 ns
Series: NVNJWS200N031L
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 10.2 ns
Typical Turn-On Delay Time: 5.2 ns
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Attributes selected: 0

Datasheet

Compliance Codes
TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
Taiwan
Assembly Country of Origin:
Malaysia
Country of Diffusion:
Taiwan
The country is subject to change at the time of shipment.

NVNJWS200N031L Single N-Channel Power MOSFET

onsemi NVNJWS200N031L Single N-Channel Power MOSFET has a drain-to-source breakdown voltage (V(BR)DSS) of 30V (minimum) and a continuous drain current (ID) rating of 3.3A. The MOSFET features a low RDS(on) of 200mΩ (maximum) (VGS = 4.5V, ID = 1.5A) to minimize conduction losses. It also features a low input capacitance (CISS) of 89pF. The device comes in a wettable flank with an ESD-protected gate. The onsemi NVNJWS200N031L is AEC-Q101 qualified and PAP capable.

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