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FGH4L75T65MQDC50

Name: onsemi FGH4L75T65MQDC50
Brand: onsemi
SKU: 863-FGH4L75T65MQDC50
Price: 10.36 EUR
Availability: InStock

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Mouser No:

863-FGH4L75T65MQDC50

Mfr. No:

FGH4L75T65MQDC50

Mfr.:

onsemi

Description:

IGBTs 650V 75A FS4 HYBRID IGBT INDUSTRIAL (TO247-4L)

Datasheet:

FGH4L75T65MQDC50 Datasheet (PDF)

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	IGBTs
RoHS:
REACH - SVHC:
Technology:	SiC
Package/Case:	TO-247-4
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.45 V
Maximum Gate Emitter Voltage:	- 30 V, 30 V
Continuous Collector Current at 25 C:	110 A
Pd - Power Dissipation:	385 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	FGH4L75T65MQDC50
Packaging:	Tube
Brand:	onsemi
Continuous Collector Current Ic Max:	110 A
Gate-Emitter Leakage Current:	400 nA
Product Type:	IGBTs
Factory Pack Quantity:	30
Subcategory:	Transistors
Tradename:	EliteSiC

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Datasheet

FGH4L75T65MQDC50 Datasheet (PDF)

Material Composition Disclosure

Compliance Codes

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: China
Country of Diffusion:: Korea, Republic of

The country is subject to change at the time of shipment.