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SVD5867NLT4G-UM

Name: onsemi SVD5867NLT4G-UM
Brand: onsemi
SKU: 863-SVD5867NLT4G-UM
Price: 0.57 EUR
Availability: OutOfStock

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See Product Specifications

Mouser No:

863-SVD5867NLT4G-UM

Mfr. No:

SVD5867NLT4G-UM

Mfr.:

onsemi

Description:

MOSFETs NFET DPAK 60V 18A 43MOHM

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

SVD5867NLT4G-UM Datasheet

ECAD Model:

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More Information

Learn more about onsemi SVD5867NLT4G-UM

Availability

Stock:: 0

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On Order:: 7.500

Expected 7/14/2026
Factory Lead Time:: 25

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	0,576 €	0,58 €
	0,368 €	3,68 €
	0,299 €	29,90 €
	0,286 €	143,00 €
	0,275 €	275,00 €
Full Reel (Order in multiples of 2500)
	0,264 €	660,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	22 A
Rds On - Drain-Source Resistance:	39 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	15 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	43 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Fall Time:	2.4 ns
Forward Transconductance - Min:	8 S
Product Type:	MOSFETs
Rise Time:	12.6 ns
Series:	NVD5867NL
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	18.2 ns
Typical Turn-On Delay Time:	6.5 ns

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Datasheet

SVD5867NLT4G-UM Datasheet

PCN

Product Change Notification 2026-6-3 (PDF)

Compliance Codes

TARIC:: 8541290000
USHTS:: 8541290095
ECCN:: EAR99

Origin Classifications

Country of Origin:: Taiwan
Assembly Country of Origin:: Vietnam
Country of Diffusion:: Taiwan

The country is subject to change at the time of shipment.

NVD5867NL Single N-Channel Power MOSFET

onsemi NVD5867NL Single N-Channel Power MOSFET features 60V drain-to-source voltage, 39mΩ maximum drain-to-source on resistance. This n-channel MOSFET offers low R_DS(on) to minimize conduction losses and high current capability. The NVD5867NL n-channel MOSFET is Avalanche energy specified, AEC-Q101 qualified, and PPAP capable. This n-channel MOSFET is Pb and halogen/BFR-free, and is RoHS-compliant. Typical applications include automotive solenoid/relay drivers, automotive lamp drivers, automotive motor drivers, automotive DC-DC converter output drivers, and automotive infotainment systems.