It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

BFR 193 E6327

Name: Infineon BFR 193 E6327
Brand: Infineon Technologies
SKU: 726-BFR193E6327
Price: 0.11 EUR
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

726-BFR193E6327

Mfr. No:

BFR 193 E6327

Mfr.:

Infineon Technologies

Description:

RF Bipolar Transistors NPN RF Transistor 12V 80mA 580mW

Datasheet:

BFR 193 E6327 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies BFR 193 E6327

Availability

Stock:: Non-Stocked

An unexpected error occurred. Please try again later.
Factory Lead Time:: 26 Weeks Estimated factory production time.

Long lead time reported on this product.

Enter Quantity:

Minimum: 15000 Multiples: 15000

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

MouseReel™ (+5,00 €)

This Product Ships FREE

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 3000)
	0,114 €	1.710,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	RF Bipolar Transistors
RoHS:
Series:	BFR193
Transistor Type:	Bipolar
Technology:	Si
Transistor Polarity:	NPN
Operating Frequency:	8 GHz
DC Collector/Base Gain hFE Min:	70
Collector- Emitter Voltage VCEO Max:	12 V
Emitter- Base Voltage VEBO:	2 V
Continuous Collector Current:	80 mA
Minimum Operating Temperature:	- 65 C
Maximum Operating Temperature:	+ 150 C
Configuration:	Single
Mounting Style:	SMD/SMT
Package/Case:	SOT-23
Qualification:	AEC-Q100
Packaging:	Reel
Brand:	Infineon Technologies
Maximum DC Collector Current:	80 mA
Pd - Power Dissipation:	580 mW
Product Type:	RF Bipolar Transistors
Factory Pack Quantity:	3000
Subcategory:	Transistors
Part # Aliases:	BFR193E6327XT SP000011056 BFR193E6327HTSA1
Unit Weight:	60 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

BFR 193 E6327 Datasheet (PDF)

Product Catalogs

Infineon's Latest Power and Sensing Guide (PDF)

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
CNHTS:: 8541210000
CAHTS:: 8541290000
USHTS:: 8541210095
JPHTS:: 8541290100
KRHTS:: 8541219000
MXHTS:: 85412999
ECCN:: EAR99

RF Transistors

Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.

RF Solutions for IoT applications

Infineon Technologies RF Solutions portfolio delivers high-performance RF technology products for reliable wireless connectivity in IoT applications. The number of IoT devices is growing at an astonishing rate. At the same time, customers expect a superior user experience in terms of product design and functionality.