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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
Datasheet
2.512On Order
MouseReel Available
Min.: 1
Mult.: 1
: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 13 A 294 mOhms - 7 V, + 20 V 5.1 V 9.4 nC - 55 C + 175 C 83 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
Datasheet
707On Order
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 36 A 78 mOhms - 7 V, + 23 V 5.7 V 31 nC - 55 C + 150 C 150 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
Datasheet
1.440On Order
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 26 A 117 mOhms - 7 V, + 23 V 5.7 V 21 nC - 55 C + 150 C 115 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
Datasheet
3.120On Order
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 13 A 289 mOhms - 7 V, + 23 V 5.7 V 8.5 nC - 55 C + 150 C 75 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
Non-Stocked Lead-Time 52 Weeks
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 28 A 94 mOhms - 5 V, + 23 V 5.7 V 22 nC - 55 C + 150 C 96 W Enhancement CoolSiC