π-MOS VII MOSFETs

Toshiba π-MOS VII MOSFETs are 10V Gate Drive, single N-channel devices, combining π-MOS technology with a planar process to provide a wide selection of voltage and RDS(ON) ratings. These high-voltage MOSFETs offer a drain-source voltage range of 250V up to 650V and a drain current range from 2A to 20A. Vishay π-MOS VII MOSFETs are offered in TO-220-3 and TO-252 through-hole packages and compact DPAK-3 and PW-Mold-3 surface mount packages.

Results: 68
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Packaging
Toshiba MOSFETs X33 Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=45W F=1MHZ Non-Stocked Lead-Time 24 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 25 A 70 mOhms - 20 V, 20 V 1.5 V 60 nC - 55 C + 150 C 45 W Enhancement MOSVII Tube
Toshiba MOSFETs N-Ch MOS 2A 600V 60W 280pF 4.3 Ohm Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1
: 200

Si Through Hole PW-Mold2-3 N-Channel 1 Channel 600 V 2 A 4.3 Ohms - 30 V, 30 V 2.4 V 7 nC - 55 C + 150 C 60 W Enhancement MOSVII Reel, Cut Tape
Toshiba MOSFETs N-Ch MOS 3.5A 550V 30W 380pF 2.45 Ohm Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 550 V 4 A 2.45 Ohms 30 W MOSVII
Toshiba MOSFETs N-Ch MOS 4A 550V 35W 490pF 1.88 Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 550 V 4 A 1.88 Ohms 35 W MOSVII
Toshiba MOSFETs N-Ch MOS 3.5A 650V 35W 600pF 1.9 Ohm Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 650 V 4 A 1.9 Ohms 35 W MOSVII
Toshiba MOSFETs N-Ch MOS 4A 500V 80W 380pF 2 Ohm Non-Stocked
Min.: 2.000
Mult.: 2.000
: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 500 V 4 A 2 Ohms 80 W MOSVII Reel
Toshiba MOSFETs N-Ch MOS 3.5A 550V 80W 380pF 2.45 Non-Stocked
Min.: 2.000
Mult.: 2.000
: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 550 V 3.5 A 2.45 Ohms 80 W MOSVII Reel
Toshiba MOSFETs N-Ch MOS 5A 525V 35W 540pF 1.5 OhM Non-Stocked Lead-Time 24 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 525 V 5 A 1.5 Ohms 35 W MOSVII Tube
Toshiba MOSFETs N-Ch MOS 4.5A 650V 35W 700pF 1.67 Ohm Non-Stocked Lead-Time 24 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 5 A 1.67 Ohms - 30 V, 30 V 2.4 V 16 nC - 55 C + 150 C 35 W Enhancement MOSVII Tube
Toshiba MOSFETs N-Ch MOS 5A 525V 80W 540pF 1.5Ohm Non-Stocked
Min.: 2.000
Mult.: 2.000
: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 525 V 5 A 1.5 Ohms 80 W MOSVII Reel
Toshiba MOSFETs N-Ch MOS 5.5A 450V 35W 490pF 1.35 Non-Stocked Lead-Time 24 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 450 V 5.5 A 1.35 Ohms 35 W MOSVII Tube
Toshiba MOSFETs N-Ch MOS 6A 500V 35W 540pF 1.4 Ohm Non-Stocked Lead-Time 24 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 500 V 6 A 1.4 Ohms 35 W MOSVII Tube
Toshiba MOSFETs N-Ch MOS 5.5A 550V 35W 600pF 1.48 Non-Stocked Lead-Time 24 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 550 V 5.5 A 1.48 Ohms 35 W MOSVII Tube
Toshiba MOSFETs N-Ch MOS 6A 525V 100W 600pF 1.3 Ohm Non-Stocked
Min.: 2.000
Mult.: 2.000
: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 525 V 6 A 1.3 Ohms 100 W MOSVII Reel
Toshiba MOSFETs N-Ch MOS 7A 650V 45W 1200pF 0.98 Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 7 A 980 mOhms - 30 V, 30 V 2 V 24 nC - 55 C + 150 C 45 W Enhancement MOSVII Tube
Toshiba MOSFETs N-Ch MOS 7.5A 450V 40W 800pF 0.77 Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 450 V 9 A 770 mOhms 40 W MOSVII Tube
Toshiba MOSFETs N-Ch MOS 8.5A 550V 40W 1050pF 0.86 Non-Stocked Lead-Time 24 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 550 V 8.5 A 860 mOhms 40 W MOSVII Tube
Toshiba MOSFETs N-Ch MOS 9A 600V 45W 1200pF 0.83 Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 600 V 9 A 830 mOhms 45 W MOSVII Tube