QPD2560L

Name: Qorvo QPD2560L
Brand: Qorvo
SKU: 772-QPD2560L
Price: 842.55 EUR
Availability: InStock

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Mouser No:

772-QPD2560L

Mfr. No:

QPD2560L

Mfr.:

Qorvo

Description:

GaN FETs 1-1.5GHz,300W,NI-650

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

QPD2560L Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	GaN FETs
RoHS:
Package/Case:	NI-650
Id - Continuous Drain Current:	33 A
Vgs - Gate-Source Voltage:	- 2.8 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Pd - Power Dissipation:	285 W
Maximum Operating Frequency:	1.5 GHz
Minimum Operating Frequency:	1 GHz
Technology:	GaN, SiC
Brand:	Qorvo
Development Kit:	QPD2560LEVB
Maximum Drain Gate Voltage:	50 V
Output Power:	338 W
Product Type:	GaN FETs
Series:	QPD2560
Factory Pack Quantity:	25
Subcategory:	Transistors
Vgs - Gate-Source Breakdown Voltage:	145 V

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Datasheet

QPD2560L Datasheet (PDF)

Compliance Codes

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: United States
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

QPD2560L 300W GaN/SiC HEMT

Qorvo QPD2560L 300W GaN/SiC HEMT is a high‑power GaN-on-SiC High Electron Mobility Transistor (HEMT) designed for demanding L‑Band applications, operating across the 1.0GHz to 1.5GHz frequency range. Engineered to deliver robust RF performance, the Qorvo QPD2560L provides up to 55.4dBm of saturated output power, 15dB of large‑signal gain, and 65% drain efficiency, making the HEMT well‑suited for both CW and pulsed operation.

FEATURED PRODUCTS

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A 200W to 300W discrete GaN-on-SiC HEMT that operates from 2.5GHz to 2.9GHz and 2.9GHz to 3.3GHz.

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220W discrete GaN-on-SiC HEMTs that operate from 1.2GHz to 1.4GHz.

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QPD2560L 300W GaN/SiC HEMT

Designed for demanding L‑Band applications, operating across the 1.0GHz to 1.5GHz frequency range.

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15W (P_3dB), 50Ω input matched discrete GaN-on-SiC HEMTs operating from 30MHz to 1.2GHz.

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In Stock: 4

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	842,55 €	842,55 €
	834,21 €	8.342,10 €

QPD2560L

Mfr.: Qorvo

Description: GaN FETs 1-1.5GHz,300W,NI-650

Specifications

Documents (1)

Datasheet

Product & Trade Compliance

More Information

QPD2560L 300W GaN/SiC HEMT

FEATURED PRODUCTS QORVO

In Stock: 4

Pricing (EUR)

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Mfr.:

Qorvo

Description:

GaN FETs 1-1.5GHz,300W,NI-650

FEATURED PRODUCTS

QORVO