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NVMYS9D3N06CLTWG

Name: onsemi NVMYS9D3N06CLTWG
Brand: onsemi
SKU: 863-NVMYS9D3N06CLTWG
Price: 1.36 EUR
Availability: Discontinued

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See Product Specifications

Mouser No:

863-NVMYS9D3N06CLTWG

Mfr. No:

NVMYS9D3N06CLTWG

Mfr.:

onsemi

Description:

MOSFETs T6 60V LL LFPAK

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

NVMYS9D3N06CLTWG Datasheet

ECAD Model:

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More Information

Learn more about onsemi NVMYS9D3N06CLTWG

Availability

Stock:: 0

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Factory Lead Time:: 47 Weeks Estimated factory production time.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,36 €	1,36 €
	0,858 €	8,58 €
	0,573 €	57,30 €
	0,452 €	226,00 €
	0,411 €	411,00 €
Full Reel (Order in multiples of 3000)
	0,36 €	1.080,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	LFPAK-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	50 A
Rds On - Drain-Source Resistance:	9.2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	9.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	46 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Fall Time:	2 ns
Forward Transconductance - Min:	37 S
Product Type:	MOSFETs
Rise Time:	25 ns
Series:	NVMYS9D3N06CL
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	16 ns
Typical Turn-On Delay Time:	6 ns

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Datasheet

NVMYS9D3N06CLTWG Datasheet

PCN

Product Change Notification 2024-06-12 (PDF)

Material Composition Disclosure

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

NVMYS9D3N06CL Power MOSFET

onsemi NVMYS9D3N06CL Power MOSFET is a 60V, 9.2mΩ, and 50A single N-channel MOSFET built with a compact and efficient design for high thermal performance. This MOSFET features low R_DS(ON) to minimize conduction losses and low gate charge (Q_G) and capacitance to minimize driver losses. The NVMYS9D3N06CL power MOSFET is AEC-Q101-qualified and is PPAP-capable. This MOSFET is suitable for reverse battery protection, power switches, switching power supplies, and other automotive applications requiring enhanced board-level reliability.

PowerTrench® MOSFETs

onsemi PowerTrench^® MOSFETs offer a broad portfolio of MOSFETs in the industry. These onsemi MOSFETs offer N-Channel and P-Channel versions optimized for low R_DS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.