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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Product
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Pd - Power Dissipation
Package/Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Infineon Technologies IGBT Modules 1200 V, 600 A dual IGBT module
Datasheet
12In Stock
Min.: 1
Mult.: 1

IGBT Silicon Modules Dual 1.2 kV 1.75 V 600 A 400 nA 152 mm x 62.5 mm x 20.5 mm - 40 C + 150 C Tray
Infineon Technologies IGBT Modules IGBT Module 1400A 1700V
Datasheet
4In Stock
Min.: 1
Mult.: 1

IGBT Modules Dual 1.7 kV 1.75 V 1.4 kA 400 nA 9.55 kW - 40 C + 150 C Tray
Infineon Technologies IGBT Modules 1200 V, 450 A dual IGBT module
Datasheet
17In Stock
Min.: 1
Mult.: 1
IGBT Silicon Modules Dual 1.2 kV 1.5 V 450 A 100 nA - 40 C + 175 C Tray
Infineon Technologies IGBT Modules PP IHM I
Datasheet
112In Stock
90Expected 6/11/2026
Min.: 1
Mult.: 1

IGBT Silicon Modules Dual 1.2 kV 1.75 V 1.4 kA 400 nA 7.65 kW PRIME3 - 40 C + 150 C Tray
Infineon Technologies IGBT Modules 1200 V, 100 A PIM IGBT module
Datasheet
5In Stock
Min.: 1
Mult.: 1

IGBT Silicon Modules 3-Phase Inverter 1.2 kV 1.5 V 100 A 100 nA - 40 C + 175 C Tray
Infineon Technologies FS450R17OE4
Infineon Technologies IGBT Modules IGBT Module 450A 1700V
Datasheet
1In Stock
Min.: 1
Mult.: 1

IGBT Modules 6-Pack 1.7 kV 1.95 V 630 A 400 nA 2.4 kW - 40 C + 150 C Tray
Infineon Technologies IGBT Modules 1200 V, 900 A dual IGBT module
Datasheet
20Expected 4/28/2026
Min.: 1
Mult.: 1
No
IGBT Silicon Modules Dual 1.2 kV 1.5 V 900 A 100 nA - 40 C + 175 C Tray
Infineon Technologies IGBT Modules 1200 V, 10 A PIM IGBT module
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 1
Mult.: 1

IGBT Silicon Modules 3-Phase Inverter 1.2 kV 1.6 V 10 A 100 nA AG-EASY1B-2 - 40 C + 175 C Tray