SIR680LDP-T1-RE3

Vishay Semiconductors
78-SIR680LDP-T1-RE3
SIR680LDP-T1-RE3

Mfr.:

Description:
MOSFETs N-Ch 80-V (D-S)

Datasheet:
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Learn more about Vishay Semiconductors SIR680LDP-T1-RE3

In Stock: 42.230

Stock:
42.230 Can Dispatch Immediately
Factory Lead Time:
8 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
3,03 € 3,03 €
1,97 € 19,70 €
1,37 € 137,00 €
1,13 € 565,00 €
Full Reel (Order in multiples of 3000)
1,13 € 3.390,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
SMD/SMT
SOIC-8
N-Channel
1 Channel
80 V
130 A
2.8 mOhms
- 20 V, 20 V
2.5 V
135 nC
- 55 C
+ 150 C
104 W
Enhancement
TrenchFET
Reel
Cut Tape
MouseReel
Brand: Vishay Semiconductors
Fall Time: 24 ns
Product Type: MOSFETs
Rise Time: 132 ns
Factory Pack Quantity: 3000
Subcategory: Transistors
Typical Turn-Off Delay Time: 94 ns
Typical Turn-On Delay Time: 32 ns
Unit Weight: 750 mg
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Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

SIR680LDP-T1-RE3 N-Channel MOSFET

Vishay SIR680LDP-T1-RE3 N-Channel MOSFET is an 80V (D-S) TrenchFET® Gen IV power MOSFET. This N-Channel MOSFET features very low RDS - Qg Figure-Of-Merit (FOM) and is tuned for the lowest RDS - Qoss FOM. Typical applications include synchronous rectification, primary side switches, DC/DC converters, solar micro-inverters, motor drive switches, batteries, load switches, and industrial.

TrenchFET® Gen IV MOSFETs

Vishay / Siliconix TrenchFET® Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high-power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switches.

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