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TSM600NA25CIT C0G

Name: Taiwan Semiconductor TSM600NA25CIT C0G
Brand: Taiwan Semiconductor
SKU: 821-TSM600NA25CITC0G
Price: 4.91 EUR
Availability: InStock

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Mouser No:

821-TSM600NA25CITC0G

Mfr. No:

TSM600NA25CIT C0G

Mfr.:

Taiwan Semiconductor

Description:

MOSFETs 250V, 22A, Single, N-Channel Low Voltage MOSFETs

Datasheet:

TSM600NA25CIT C0G Datasheet

ECAD Model:

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In Stock: 3.997

Stock:: 3.997 Can Dispatch Immediately

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Factory Lead Time:: 50 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	4,91 €	4,91 €
	3,17 €	31,70 €
	2,34 €	234,00 €
	1,97 €	985,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Taiwan Semiconductor
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	ITO-220TL-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	250 V
Id - Continuous Drain Current:	22 A
Rds On - Drain-Source Resistance:	60 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4.2 V
Qg - Gate Charge:	71 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	78 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Tube
Brand:	Taiwan Semiconductor
Configuration:	Single
Fall Time:	25 ns
Product Type:	MOSFETs
Rise Time:	16 ns
Factory Pack Quantity:	2000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	78 ns
Typical Turn-On Delay Time:	16 ns
Part # Aliases:	TSM600NA25CIT
Unit Weight:	1,584 g

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Compliance Codes

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Taiwan
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

TSM600NA25CIT N-Channel Power MOSFET

Taiwan Semiconductor TSM600NA25CIT N-Channel Power MOSFET is a 250V low-voltage and single configuration MOSFET built with Trench technology. This MOSFET features a 22A continuous drain current, 60mΩ drain-source resistance, 78W power dissipation, and 71nC gate charge. The TSM600NA25CIT MOSFET offers 22pF reverse transfer capacitance and is Pb-free, halogen-free, and RoHS compliant. This power MOSFET is ideally used in Uninterruptible Power Supply (UPS), AC-DC power supply, and lighting applications.