CGH40006S

Name: MACOM CGH40006S
Brand: MACOM
SKU: 941-CGH40006S
Price: 44.34 EUR
Availability: InStock

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Mouser No:

941-CGH40006S

Mfr. No:

CGH40006S

Mfr.:

MACOM

Description:

GaN FETs GaN HEMT DC-6.0GHz, 6 Watt

Datasheet:

CGH40006S Datasheet (PDF)

ECAD Model:

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Learn more about MACOM CGH40006S

In Stock: 1.529

Stock:: 1.529 Can Dispatch Immediately

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Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

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Packaging:

Full Reel (Order in multiples of 200)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	44,34 €	44,34 €
	35,84 €	358,40 €
	31,65 €	3.165,00 €
Full Reel (Order in multiples of 200)
	31,65 €	6.330,00 €
400	Quote

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	MACOM
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	QFN-6
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	120 V
Id - Continuous Drain Current:	750 mA
Vgs th - Gate-Source Threshold Voltage:	- 3 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Brand:	MACOM
Configuration:	Single
Development Kit:	CGH40006S-KIT
Gain:	13 dB
Maximum Operating Frequency:	6 GHz
Minimum Operating Frequency:	2 GHz
Moisture Sensitive:	Yes
Output Power:	6.9 W
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product:	GaN HEMTs
Product Type:	GaN FETs
Factory Pack Quantity:	200
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	GaN HEMT
Vgs - Gate-Source Breakdown Voltage:	- 10 V to 2 V
Unit Weight:	2,898 g

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Datasheet

CGH40006S Datasheet (PDF)

PCN

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TARIC:: 8542399000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290055
JPHTS:: 854239099
KRHTS:: 8541299000
MXHTS:: 8542399901
ECCN:: EAR99

GaN HEMTs

MACOM Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to deliver high efficiency and high gain. The modules also feature wide bandwidth capabilities, making them ideal for linear and compressed amplifier circuits. GaN offers superior properties compared to silicon or gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. For design flexibility, MACOM GaN HEMTs are offered in a variety of package types, including DFN, 440193, 440196, 440166, 440206, and bare die.