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SSM3J375F,LXHF

Name: Toshiba SSM3J375F,LXHF
Brand: Toshiba
SKU: 757-SSM3J375FLXHF
Price: 0.36 EUR
Availability: InStock

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See Product Specifications

Mouser No:

757-SSM3J375FLXHF

Mfr. No:

SSM3J375F,LXHF

Mfr.:

Toshiba

Description:

MOSFETs P Channel -20V -2A AECQ MOSFET

Datasheet:

SSM3J375F,LXHF Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Toshiba SSM3J375F,LXHF

In Stock: 5.444

Stock:: 5.444 Can Dispatch Immediately

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Factory Lead Time:: 3 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,361 €	0,36 €
	0,249 €	2,49 €
	0,161 €	16,10 €
	0,12 €	60,00 €
	0,107 €	107,00 €
Full Reel (Order in multiples of 3000)
	0,088 €	264,00 €
	0,079 €	474,00 €
	0,071 €	639,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	S-Mini-3
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	2 A
Rds On - Drain-Source Resistance:	150 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 6 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	4.6 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.2 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TH
Forward Transconductance - Min:	2.2 S
Product Type:	MOSFETs
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	43 ns
Typical Turn-On Delay Time:	17 ns
Unit Weight:	12 mg

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Toshiba Electronic Devices & Storage Corporation Automotive products 
may be used as engineering samples, however; they are not intended for 
volume automotive production or reliability testing without prior 
approval by Toshiba Semiconductor and Storage. 
Please contact a Mouser Technical Sales Representative for 
further assistance.
5-0320-2

Filter Document:

Datasheet

SSM3J375F,LXHF Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Automotive Devices

Toshiba Automotive Devices offer an extensive lineup of MOSFETs, optical isolation, transistors, and diodes, to cover various automotive applications in 12V to 48V battery systems. In addition, Toshiba offers automotive-grade motor control drivers. Toshiba automotive devices are AEC-Q100 and AEC-Q101 qualified.

Automotive N-/P-Channel SSMx MOSFETs

Toshiba Automotive N- and P-Channel SSMx MOSFETs are available in multiple package styles to cover various automotive applications in 12V to 48V battery systems. The AEC-qualified SSMx MOSFETS benefit from Toshiba's state-of-the-art wafer processes that suppress switching noise. The wafer processes and low resistance allow these MOSFETs to achieve a leading level of low on-resistance. The low resistance contributes to reduced energy loss and miniaturization of applications.

U-MOSVI Small Signal MOSFETs

Toshiba U-MOSVI Small Signal MOSFETs offer a variety of gate drive voltages required for many different types of mobile devices. They are available in single, dual, N-channel, P-channel and various voltage versions, providing a wide variety of options for designers. Each MOSFET addresses the need to support high-current charging with low voltage and low R_DS(on) requirements. The compact packages and and low voltage operation make Toshiba U-MOSVI Small Signal MOSFETs an ideal solution for high-density packaging requirements in smart phones and game consoles.

Automotive Small Signal MOSFET Devices

Toshiba Automotive Small Signal MOSFET Devices are AEC-Q101 qualified compact body semi-power MOSFETs. The devices support a wide range of automotive applications for battery systems from 12V to 48V including power line load switches, LED headlights, and BMS cell balance circuitry. The SOT-23F is a Toshiba proprietary flat-lead featured package as opposed to the existing gull-wing lead type SOT-23 package. This improves thermal dissipation through increased heat sinking contact area between the package and the Print Circuit Board (PCB). As mount quality and reliability under harsh thermal environments is a usual concern for flat-lead type packages, thermal cycling requirements for automotive applications have been met. The devices also maintain footprint compatibility to the predecessor SOT-23 package. By combining sophisticated wafer processing and packaging techniques, the SSM3K341R and SSM3K361R in the SOT-23F package boasts industry-leading RDS(ON) of 36mΩ and 65mΩ (@VGS=4.5V) respectively. The low on-resistance allows a reduction in application size while also reducing energy losses. In addition, both devices support a maximum channel temperature of +175°C and can be used extensively in automotive applications where the operating environment is demanding.