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LMG3522R030RQSR

Name: Texas Instruments LMG3522R030RQSR
Brand: Texas Instruments
SKU: 595-LMG3522R030RQSR
Price: 11.36 EUR
Availability: OutOfStock

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Mouser No:

595-LMG3522R030RQSR

Mfr. No:

LMG3522R030RQSR

Mfr.:

Texas Instruments

Description:

Gate Drivers 650-V 30-m? GaN FET with integrated driv

Datasheet:

LMG3522R030RQSR Datasheet

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Learn more about Texas Instruments LMG3522R030RQSR

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This product may require additional documentation to export from the United States.

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Factory Lead Time:: 12 Weeks Estimated factory production time.

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Minimum: 2000 Multiples: 2000

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 2000)
	11,36 €	22.720,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	Gate Drivers
Delivery Restrictions:	This product may require additional documentation to export from the United States.
Product:	Driver ICs - Various
Type:	Half-Bridge
Mounting Style:	SMD/SMT
Package/Case:	VQFN-52
Number of Drivers:	1 Driver
Number of Outputs:	1 Output
Supply Voltage - Min:	7.5 V
Supply Voltage - Max:	18 V
Configuration:	Non-Inverting
Rise Time:	4.3 ns
Fall Time:	22 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	LMG3522R030
Packaging:	Reel
Brand:	Texas Instruments
Features:	Robust Protection
Maximum Turn-Off Delay Time:	69 ns
Maximum Turn-On Delay Time:	54 ns
Moisture Sensitive:	Yes
Operating Supply Current:	15.5 mA
Output Voltage:	5 V
Product Type:	Gate Drivers
Rds On - Drain-Source Resistance:	26 mOhms
Shutdown:	Shutdown
Factory Pack Quantity:	2000
Subcategory:	PMIC - Power Management ICs
Technology:	Si

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Datasheet

LMG3522R030RQSR Datasheet

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USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: 3A001.A.2.A

LMG3522R030/LMG3522R030-Q1 650V 30mΩ GaN FETs

Texas Instruments LMG3522R030/LMG3522R030-Q1 650V 30mΩ GaN FETs include an integrated driver and protection for switch-mode power converters. The LMG3522R030/LMG3522R030-Q1 integrates a silicon driver that allows switching speeds up to 150V/ns. The device implements TI’s integrated precision gate bias, resulting in higher switching SOA than discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, supplies clean switching and minimal ringing in hard-switching power supply topologies. An adjustable gate drive strength permits control of the slew rate from 20V/ns to 150V/ns, which can be used to control EMI and optimize switching performance actively.